Pre-matched compact coupling detection circuit chip integrated with gan power amplifier
A technology of power amplifier and coupled detection, which is applied in the direction of power amplifiers, can solve the problems of occupying space, reducing the detection sensitivity, and the large difference between the RF input impedance and the coupled microstrip impedance, so as to reduce the chip size and improve the detection sensitivity.
Active Publication Date: 2022-07-22
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology
The peripheral coupling circuit and detector chip will inevitably occupy the space in the component, which is not conducive to the miniaturization design of the component, and the gold wire interconnection between the power amplifier chip, the coupler and the detector is required, which increases the complexity of microwave component assembly
However, the RF input impedance of the detection diode is quite different from the impedance of the coupled microstrip, and the matching is not good, resulting in the RF power being partially reflected and wasted, reducing the detection sensitivity
Method used
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[0021] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, but not to be construed as a limitation of the present invention.
[0022] like figure 1 As shown, it is the circuit diagram of the pre-matched compact coupling detection circuit chip integrated with the GaN power amplifier, including the substrate, the active region (1), the radio frequency output matching network (2), the coupling microstrip circuit (3A), the pre- The matching circuit (3B) and the detection circuit (3C), the active area (1), the radio frequency output matching network (2), the coupling microstrip circuit (3A), the pre-matching circuit (3B)...
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The invention discloses a pre-matching compact coupling detection circuit chip integrated with a GaN power amplifier. The circuit shares a microstrip line with the RF output matching network. The pre-matching circuit transmits the coupled RF power to the diode input in an impedance-matched manner. After passing through the RC detection circuit, the detected voltage is output from the Vout pressure point. The invention improves the radio frequency power coupling by using the radio frequency output transmission line of the power amplifier by adding a directional coupler and a detector to the traditional detection method, and performs two-stage LC pre-matching on the radio frequency power entering the detection diode, without increasing the chip size of the power amplifier. Under the same conditions, the detection function is integrated, the design complexity of the microwave components is reduced, and the detection sensitivity and effective working bandwidth are greatly improved through two-stage LC pre-matching.
Description
technical field [0001] The invention relates to a third-generation semiconductor GaN power amplifier chip with on-chip integrated detection function, in particular to a GaN power amplifier MMIC with detection function using a pre-matched compact coupling structure. Background technique [0002] Solid-state power devices are key components in microwave communication systems, especially microwave power devices and monolithic circuits are the core components in wireless communication systems. As a third-generation wide-bandgap compound semiconductor device, GaN HEMT has significant performance advantages over Si and GaAs semiconductor materials in the field of microwave power device applications, with high output power density, high breakdown voltage, high temperature resistance, and good radiation resistance. Etc. With the development of the 5G communication system, microwave communication systems have higher and higher requirements for the miniaturization of transmitting com...
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IPC IPC(8): H03F3/20
CPCH03F3/20
Inventor 金辉陶洪琪余旭明叶川
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD