Pre-matching compact coupled detection circuit chip integrated with GaN power amplifier

Abstract

The invention discloses a pre-matching compact coupled detection circuit chip integrated with a GaN power amplifier. The circuit chip comprises an active region, a radio frequency output matching network, a coupling microstrip circuit, a pre-matching circuit and a detection circuit which are arranged on a substrate, the coupling microstrip circuit and the radio frequency output matching network share one microstrip line, the pre-matching circuit transmits coupled radio frequency power to the input end of the diode in an impedance matching mode, and after the coupled radio frequency power passes through the RC detection circuit, a detection voltage is output through a Vout voltage point. According to the invention, a traditional detection mode of a directional coupler and a detector is adopted, and a power amplifier radio frequency output transmission line is used to carry out radio frequency power coupling. The two-stage LC pre-matching is carried out on the radio frequency power entering the detection diode, the detection function is integrated under the condition that the size of a power amplifier chip is not increased, the design complexity of the microwave assembly is reduced,and the detection sensitivity and the effective working bandwidth are greatly improved through the two-stage LC pre-matching.

Description

technical field [0001] The invention relates to a third-generation semiconductor GaN power amplifier chip integrated with a detection function on a chip, in particular to a GaN power amplifier MMIC with a detection function using a pre-matched compact coupling structure. Background technique [0002] Solid-state power devices are key components in microwave communication systems, especially microwave power devices and monolithic circuits are core components in systems such as wireless communication. As a third-generation wide bandgap compound semiconductor device, GaN HEMT has significant performance advantages over Si and GaAs semiconductor materials in the application field of microwave power devices. It has high output power density, high breakdown voltage, high temperature resistance, and good radiation resistance. Etc. With the development of the 5G communication system, microwave communication systems have higher and higher requirements for the miniaturization of tran...

AI Technical Summary

Problems solved by technology

The peripheral coupling circuit and detector chip will inevitably occupy the space in the component, which is not conducive to the miniaturization design of the component, and the gold wire interconnection between the power amplifier chip, the coupler and the detector is required, which increases the complexity of microwave component assembly

However, the RF input impedance of the detection diode is quite different from the impedance of the coupled microstrip, and the matching is not good, resulting in the RF power being partially reflected and wasted, reducing the detection sensitivity

Images