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LED chip preparation method

An LED chip and electrode preparation technology, which is used in electrical components, circuits, semiconductor devices, etc., to achieve good luminous brightness, reduce the number of lithography, and improve adhesion.

Inactive Publication Date: 2020-09-25
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a LED chip preparation method to solve the problems of simplifying the LED chip preparation process and improving the performance of the LED chip

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Embodiment 1

[0044] see Figure 1 to Figure 9 , a LED chip preparation method, this embodiment is applied to the preparation of LED chips.

[0045] A method for preparing an LED chip, comprising the steps of:

[0046] Step A: grow a buffer layer 2, a first semiconductor layer 3, a multi-quantum well layer 4 and a second semiconductor layer 5 on a substrate 1, and the obtained LED structure epitaxial wafer is as follows figure 1 Shown; In the present embodiment, the thickness of substrate 1 is 650 microns, the thickness of buffer layer 2 is 3.6~3.8 microns, the thickness of first semiconductor layer 3 is 1.6~1.8 microns, the thickness of multi-quantum hydrazine layer 4 is 0.16 ~0.17 microns, the thickness of the second semiconductor layer 5 is 0.9-1.1 microns.

[0047] In this embodiment, the substrate 1 can be selected from one of a sapphire substrate, a silicon substrate or a silicon carbide substrate; the first semiconductor layer 3 is an N-type semiconductor layer (N-GaN); the second ...

Embodiment 2

[0063] The difference between Example 2 and Example 1 is that the edge of the second semiconductor layer 5 of the finally prepared LED chip exceeds the edge of the current spreading layer 6 by 1.6 μm. The LED chip prepared in Example 2 is tested, and the forward direction of the chip is obtained. The voltage (VF) is 2.859V, the luminance (LOP) is 57.90mW, and the leakage yield (IR yield) is 98.70%.

Embodiment 3

[0065] The difference between Example 3 and Example 1 is that the edge of the second semiconductor layer 5 of the finally prepared LED chip exceeds the edge of the current spreading layer 6 by 4 μm. The LED chip prepared in Example 3 is tested to obtain the forward voltage of the chip (VF) is 2.865V, luminance (LOP) is 57.30mW, leakage yield (IR yield) is 99.10%.

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Abstract

The invention provides an LED chip preparation method. The method comprises the following steps of: growing a complete LED structure epitaxial wafer on a substrate; preparing a current spreading layeron a second semiconductor layer, and preparing a current spreading layer pattern through a photoetching process and a corrosion process; sequentially etching the current spreading layer, the second semiconductor layer, a multi-quantum well layer and a first semiconductor layer; corroding the edge of the current spreading layer by adopting a corrosion process to enable the edge of the second semiconductor layer to exceed the edge of the current spreading layer; depositing an insulating layer; preparing an electrode pattern through a photoetching process, and preparing electrode holes through acorrosion process; and preparing a P electrode and an N electrode to prepare a complete LED chip. According to the LED chip preparation method of the invention, the current spreading layer is prepared; the current spreading layer pattern is prepared through the photoetching process and the corrosion process, and then the device is etched, so that electric leakage caused by current spreading layermaterial residues on the side surfaces of the second semiconductor layer and the multi-quantum well layer and on the upper surface of the first semiconductor layer when the current spreading layer isprepared after etching can be avoided.

Description

technical field [0001] The invention relates to the technical field of LED chip manufacturing, in particular to a method for preparing an LED chip. Background technique [0002] With the rapid development of LED technology and the gradual improvement of LED light efficiency, the application of LED will become more and more extensive. And as the global energy shortage becomes more and more serious, people pay more and more attention to the development prospect of LED in the lighting market. LED will be a potential light source to replace incandescent lamps, tungsten lamps and fluorescent lamps. In the preparation of LED chips, many times of etching and corrosion are required. How to simplify the preparation process and reduce production costs has become an urgent problem to be solved. In addition, the preparation process of LED chips has a great impact on the luminous brightness, leakage yield and antistatic ability of LED chips. It has a great impact, and it is necessary to...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/38
CPCH01L33/007H01L33/06H01L33/14H01L33/382H01L33/387
Inventor 周智斌
Owner XIANGNENG HUALEI OPTOELECTRONICS