A method for improving the thickness uniformity of ion beam exfoliated films
A thin film thickness and ion beam technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, electrical components, circuits, etc., can solve the deterioration of film thickness uniformity, wafer device performance deviation, increased transmission loss, etc. problem, achieve the effect of improving the uniformity of film thickness, improving the consistency of device performance, and not causing the deterioration of device performance
Active Publication Date: 2022-07-22
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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Problems solved by technology
However, the film thickness uniformity after the existing surface planarization technology will be deteriorated
For integrated optical devices, due to the long size of the transmission waveguide and the sensitivity of the interferometer to the structure, the non-uniform film thickness will cause the effective refractive index to change, which will increase the transmission loss and the manipulation of light waves.
For acoustic devices, the ratio of the thickness of the piezoelectric layer to the thickness of the supporting substrate is strictly designed. Changes in the thickness of the piezoelectric layer will change the resonant frequency, Q value and coupling coefficient, resulting in performance deviations of different devices in the wafer
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Embodiment 1
[0021] For the technology of ion beam stripping of functional thin films, the type of ion beam used is generally co-implantation of various ions such as H ions, He ions or H / He. The distribution of different implanted ions in the material is also different, and the mechanism of stripping is also different. For example, for lithium niobate, H ions will combine with O ions in LN after implantation to form a wide distribution range, resulting in a large range of thickness fluctuations in peeling, and the non-uniformity (NU) of the film after peeling. May reach + / -2.5%~+ / -5%( Figure 4 ). However, after He ion implantation, large stress will be introduced and plate-like defects will be formed. At this time, the LN peeling mainly depends on the lateral extension of the plate-like defects, and the film thickness non-uniformity after peeling is only about + / -1%. Therefore, two different processing schemes are proposed for different initial non-uniformity (NU), but Ar ions are used ...
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Abstract
The invention relates to a method for improving the thickness uniformity of an ion beam peeling film, which includes: thinning the thin film by ion sputtering, and reducing the roughness of the thin film by chemical mechanical polishing after the ion thinning. The method of the invention successfully improves the uniformity of the film thickness, does not introduce additional defect layers on the surface of the film, improves the device performance consistency between different regions in the wafer and does not cause device performance deterioration, and has good application prospects.
Description
technical field [0001] The invention belongs to the field of electronic components, and particularly relates to a method for improving the thickness uniformity of an ion beam peeling film. Background technique [0002] With the development of the field of microelectronic devices, the chip monolithic integration technology based on the heterogeneous integration of materials has gradually attracted people's attention. Heterogeneous integration of materials can not only improve the performance of traditional devices, but also develop new operating modes. The emergence of new material platforms enables experimental verification of theoretical new devices and working principles. At present, ion beam lift-off technology based on ion implantation and hetero-bonding technology has gradually become a main method of hetero-integration. And the development of substrates and devices based on this technology has also been extensively studied. For example, Harvard University used lithi...
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IPC IPC(8): H01L41/332H01L41/337H10N30/082H10N30/086
CPCH10N30/086H10N30/082
Inventor 黄凯欧欣赵晓蒙李忠旭陈阳
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD