Bidirectional symmetrical TVS diode and manufacturing method thereof
A diode and symmetrical technology, applied in the field of bidirectional symmetrical TVS diodes and its manufacturing, can solve the problems of difficult control of bidirectional voltage consistency, waste of chip area, low integration, etc., to achieve metal coverage, reduce thermal process, and improve reliability sexual effect
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[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0031] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
[0032] refer to figure 1 As shown, the bidirectional symmetrical TVS diode of the present invention includes a P-type substrate 1, an N-type epitaxial layer 2, a P+ doped region 3, a P+ through region 4, an oxide layer 5, a metal hole 6, a passivation layer 7 and a back metal layer 8 , the N-typ...
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