75results about How to "Reduce thermal process" patented technology

A rotating electric machine in which, in welding a stator core and a case together, thermal damage to an insulation film due to the welding is suppressed. The rotating electric machine has the case (10) and the stator core (20). The stator core (20) has teeth (21) and a back yoke (22). Recesses (221) open to the side opposite a rotating shaft (P) are arranged in the outer peripheral surface (220)of the back yoke (22) such that each of the recesses (221) corresponds to each of the teeth (21). The case (10) and the stator core (20) are welded and fixed together at a position between each of tworecesses (221) adjacent to each other in the direction of a circumference about the rotating axis (P). The minimum distance between the root and recess (221) of each of the teeth (21) is smaller thanthe width in the radial direction of the back yoke.

The invention discloses a cement clinker and belongs to the technical field of cement clinker production. The clinker is prepared from the following raw materials in percentage by mass: 30 to 60 percent of calcareous materials, 0 to 25 percent of siliceous materials, 10 to 40 percent of aluminum materials, 0 to 10 percent of ferrous materials and 5 to 20 percent of gypsum materials; a mineral composition of the clinker is prepared from 10 to 40 percent of C4AS, 25 to 40 percent of C2S and 10 to 30 percent of C4AF. According to the clinker disclosed by the invention, the iron content of the cement clinker is low, and the seawater erosion resisting ability of the clinker is improved; the cement clinker is especially suitable for marine engineering.

The invention discloses a manufacturing method of a trench-gate superjunction device. The manufacturing method comprises the steps of 1, forming a trench gate, wherein the step 1 comprises the steps of 11, forming a gate groove in a first epitaxial layer in which a superjunction structure is not formed; 12, forming a gate oxide layer, and rounding a bottom angle and a top angle of the gate grooveby a thermal oxidization process of the gate oxide layer; and 13, forming a poly-silicon gate; and 2, forming the superjunction structure, wherein the step 2 comprises the steps of 21, forming a superjunction post groove; and 22, filling a second epitaxial layer in the superjunction post groove to form a second conductive type of post of the superjunction structure, wherein the first conductive type of post of the superjunction structure comprises the first epitaxial layer between the superjunction grooves. By the manufacturing method, the electric leakage of the device can be reduced, the reliability of the device is improved, and meanwhile, the specific conduction resistance of the device also can be reduced.

A method and apparatus reduces hot spotting in transmission clutch packs actuated by a piston with axial fingers engaging the clutch pack. The method and apparatus combine an alternative pack arrangement with the fingered actuator, the alternative pack preferably being an inverted double sided pack or a single sided pack. The friction plates may have single or double side friction layers, but a second set of plates are splined for rotation with the shaft when the friction plates and the piston are splined for rotation with the housing in which the shaft rotates.

The invention relates to a method for cleaning adhesive slag of circuit board cutting tool, which artificially removes the chip on used drill needle, and uses cleaning agent to clean the drill needle again, then uses ball objects to clean the drill needle via spraying sand, uses ball objects and cleaning agent to clean the needle via ultrasonic wave, dries the needle and colors, at last grinds the face of the drill needle. Therefore, the invention can effectively remove the adhesive slag on the drill needle, improve service life of drill needle, smoothness and cutting force, to improve the quality of drill hole.

In one aspect of the invention, a rechargeable battery has a cathode cavity formed in a cathode housing and a anode cavity in a anode housing. A moveable membrane is disposed between the cathode cavity and the anode cavity. The cathode cavities are filled with an electrolyte.

The present invention discloses a probiotics sea buckthorn fruit puree jelly and a preparation method thereof, and belongs to the field of probiotics. A sea buckthorn fruit puree jelly is used as a carrier of probiotics; proteins, polysaccharides and other ingredients in sea buckthorn fruit puree are utilized; and at the same time, a gel substance is combined with thalli of bifidobacteria, lactobacillus, etc. to form the probiotics sea buckthorn fruit puree jelly. The probiotics sea buckthorn fruit puree jelly effectively reduces heat, oxidation and drying damages to the probiotics during a conventional drying process, achieves a purpose of long-term preservation of the probiotics, at the same time plays a role of resisting oxidation damages, effectively prevents vigor loss of bacterial strains during a storage process, also improves the additional nutritional value of the probiotics, and is widely used in food industry.

A semiconductor structure includes a substrate, and first isolation structures, at least one buried word line and at least one second isolation structure which are disposed in the substrate. The buried word line intersects the first isolation structures. The second isolation structure intersects the first isolation structures. A material of at least a portion of the second isolation structure is different from a material of the first isolation structures.

A method for making a super junction device includes the following steps: step 1: forming a trench gate, in the forming process of the trench gate, a polysilicon gate being used to fill gate trenches and then first flattening being performed and the width of the gate trench at the leading-out position of the gate structure satisfies the requirement of forming contacts; and step 2: forming a super junction, in the forming process of the super junction, a second epitaxial layer being used to fill a super junction trench and then second flattening being performed. The method can realize an all flat process, can conveniently arrange the trench gate process before the forming process of the super junction, can decrease the thermal processes after the formation of the super junction, can save the mask and can decrease the process cost.

The invention provides a filament current control circuit of hot-cathode fluorescent lamp, which is used for accurately controlling the filament current of hot-cathode fluorescent lamp, comprising a filament heating transformer and a filament current control loop. A primary loop of the filament heating transformer is connected with the filament current control loop, and two ends of secondary loop are respectively connected with two ends of a hot-cathode filament of fluorescent lamp. The driving power supply of the fluorescent lamp is connected to a centre tap of the corresponding secondary loop. The filament current control loop comprises a power switch, a control logic, a multiple-input comparator, an oscillator, a reference voltage source, a reference current source, a primary loop current sampling resistor, a filtering capacitor, a filtering resistor and so on. By using the filament current control circuit of hot-cathode fluorescent lamp in this invention, the influence of the lamp tube on the temperature of filament can be reduced, the filament current can be accurately controlled, the temperature of filament can be stabilized, the service life of fluorescent lamp can be prolonged, and the current balance of shunt-wound fluorescent lamp can be realized without using an extra choke coil.

The invention relates to a bidirectional symmetrical TVS diode and a manufacturing method thereof. According to the invention, a low-pressure chemical vapor deposition method is used to reduce a thermal process, transverse bidirectional TVS is realized, the performance is stable, and the bidirectional symmetry is consistent. An etching method including a dry method and a wet method is employed, thereby guaranteeing that the silicon in the window is prevented from being over-etched, guaranteeing the good shape and appearance of a window, facilitating the metal coverage, and improving the reliability of a device; a surface dielectric layer uses TEOS silicon dioxide produced by low-pressure chemical vapor deposition to replace silicon dioxide produced by thermal oxidation, so the thermal process in the process is greatly reduced, the production cost is reduced, and the stability of the device is improved. One end of the TVS is connected to the back surface of the chip through the punch-through region, so the area of the chip is saved.

The invention relates to a sound converter, particularly a sound converter including suspension devices used for connecting the lower end or lower end side surface of a voice coil to a frame so as tosuppress splitting and vibration. The sound converter includes a frame; a bottom plate including an outer bottom plate and an inner bottom plate; a top plate including an outer top plate and an innertop plate; a center magnet mounted between the inner top plate and the inner bottom plate; first to fourth sub-magnets mounted between the outer top plate and the outer bottom plate and spaced apart from the center magnet by a magnetic gap; a first suspension device including a center dome member and an edge dome member mounted at the top part of the frame; a second suspension device including FPCB and attached to the bottom surface of a vibrating diaphragm; a voice coil having a lower end positioned in the magnetic gap and an upper end attached to the bottom surface of the second suspension device; and a third suspension device including first to fourth dampers. The dampers penetrate space among the sub-magnets to connect the lower end of the voice coil to the frame.

Provided are: a rotating drive mechanism which can, without requiring a special drive device and a control device, rotate a large number of rotating shafts while continuously moving the rotating shafts and which is configured so that the rotational speed of the rotating shafts can be arbitrarily changed by a simple configuration; and a film label application device. A rotating drive mechanism is provided with: a movable driven member (103) which has a follower mechanism (105) provided to the tapered section (104) thereof and to which a rotating shaft (112) is connected; and a driving member (101) which is provided along the direction of movement of the driven member (103) and which has a transmission mechanism (102) provided to the sloped section (115) thereof. The transmission mechanism (102) is provided so as to face an arbitrary position of the follower mechanism (105).

In one aspect of the invention, a rechargeable battery has a cathode cavity formed in a cathode housing and a anode cavity in a anode housing. A moveable membrane is disposed between the cathode cavity and the anode cavity. The cathode cavities are filled with an electrolyte.

In one aspect of the invention, a rechargeable battery has a cathode cavity formed in a cathode housing and a anode cavity in a anode housing. A moveable membrane is disposed between the cathode cavity and the anode cavity. The cathode cavities are filled with an electrolyte.

A solid state relay is disclosed. The solid state relay includes an N-type MOSFET transistor, the drain of the N-type MOSFET transistor is connected with the positive electrode of the automobile battery, the source of the N-type MOSFET transistor is connected to the load input terminal, the gate of the N-type MOSFET transistor is connected to a booster circuit, the drain of the N-type MOSFET transistor is also connected with a voltage drop acquisition circuit of the N-type MOSFET transistor. The solid state relay also includes a switching logic control circuit, the input terminal A and the input terminal B of the solid-state relay are connected with a switch logic control circuit, the function of the switching logic control circuit is to convert a positive or negative control level of an external input connecting the input terminal A and the input terminal B to the solid-state relay to a control level of the N-type MOSFET transistor, one output terminal of the switching logic control circuit is connected with the booster circuit, and the other output terminal of the switching logic control circuit is connected with an N-type MOSFET transistor voltage drop acquisition circuit.