Bonding structure for reducing voltage loss and preparation method thereof

Abstract

The invention discloses a bonding structure for reducing voltage loss and a preparation method thereof. According to the method, a protective layer capable of inhibiting diffusion of internal and external atoms and protecting a crystal structure on the surface of a material is deposited on the surfaces of two bonding materials forming a semiconductor bonding structure in vacuum, thereby preventingthe adsorption of impurity atoms in the environment atmosphere on the bonding surface, protecting the surface crystal structure of the bonding material, inhibiting the diffusion of doped atoms of thebonding material to the surface, reducing the complexity and difficulty of the surface cleaning and activating process, reducing the potential barrier of carriers crossing the bonding interface, andimproving the final device performance.

Description

technical field [0001] The invention relates to a bonding structure for reducing voltage loss and a preparation method thereof, and belongs to the technical field of improving the performance of bonding structure devices. Background technique [0002] Semiconductor bonding technology can directly contact two materials with different lattice constants and effectively combine them under certain pressure and temperature conditions to form a semiconductor bonding structure and realize microelectronics, optoelectronics and other devices with different spectral ranges and functions. It is widely used in solid-state switching circuits, III-V compound solar cells, semiconductor lasers, semiconductor detectors and other heterogeneous integrated devices and chips. Since the role of the semiconductor bonding structure is to connect two materials with different lattice constants, the surface quality must meet the basic requirements of the semiconductor bonding process, that is, the bond...

AI Technical Summary

Problems solved by technology

The surface of the two materials involved in semiconductor bonding in the current technology attracts a large number of ambient atmosphere impurity atoms to adsorb due to the electrostatic effect of bond breaking. This adsorption often has two negative effects: 1) The surface aggregation behavior of impurity atoms in the ambient atmosphere Pollution destroys the crystal structure of the surface, which is difficult to remove in the subsequent surface cleaning and activation; 2) The dopant atoms in the two materials diffuse to the surface under the electrostatic attraction of the impurity atoms adsorbed on the surface and combine with it to form an electrically neutral group, Or the surface impurity atoms diffuse into the material under the electrostatic attraction of the doping atoms inside the bonding material and combine to form an electrically neutral group

The result of these two negative effects is to increase the electrical barrier of carriers across the bonding interface, increase the resistivity of the semiconductor bonding structure, and restrict the performance of the final device.

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