Stepping exposure method based on UV-LED photoetching light source

A technology of UV-LED and exposure method, which is applied in the field of semiconductors and can solve the problem of limited exposure area

Inactive Publication Date: 2020-10-20
BEIJING U PRECISION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above problems, the purpose of the present invention is to provide a step-by-step exposure method based on UV-LED lithography light source, to solve the problem of limited exposure area in the existing

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  • Stepping exposure method based on UV-LED photoetching light source
  • Stepping exposure method based on UV-LED photoetching light source
  • Stepping exposure method based on UV-LED photoetching light source

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Embodiment Construction

[0050] Embodiments of the present invention will be described below with reference to the accompanying drawings. Those skilled in the art would recognize that the described embodiments can be modified in various ways or combinations thereof without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Also, in this specification, the drawings are not drawn to scale, and like reference numerals denote like parts.

[0051] figure 1 It is a schematic flow chart of the step-by-step exposure method based on the UV-LED lithography light source of the present invention, as figure 1 As shown, the stepwise exposure method based on UV-LED lithography light source includes:

[0052] Step S1, using the UV-LED light source 1 as the lithography light source to form an exposure field with a uniform distribution of light intensity. The complex light source in the exposur...

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Abstract

The invention discloses a stepping exposure method based on a UV-LED photoetching light source, and the method comprises the steps: employing the UV-LED light source as the photoetching light source,so as to form an exposure field with uniformly distributed light intensity; aligning the mask mark with the wafer mark through a mask alignment system; collimating the emergent light beam of the UV-LED light source through a micro lens array, and forming a square exposure light spot on the surface of the mask; and transferring the mask pattern to the wafer coated with the photoresist through stepping exposure. According to the invention, an infinite exposure area can be realized, the submicron mask alignment precision can be realized, and a foundation is laid for realizing high-precision photoetching.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a method for exposing a photolithography machine. Background technique [0002] Exposure is an essential process in microfabrication and a key step in photolithography. With the development of semiconductor technology, the requirements for exposure are getting higher and higher. In the existing exposure methods, the exposure area that can usually be realized is limited, which affects the precision of photolithography. Contents of the invention [0003] In view of the above problems, the purpose of the present invention is to provide a stepwise exposure method based on UV-LED lithography light source to solve the problem of limited exposure area. [0004] In order to achieve the above object, the present invention adopts the following technical solutions: [0005] The step-by-step exposure method based on UV-LED lithography light source of the present invention...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F9/00
CPCG03F7/2004G03F7/70075G03F7/70241G03F7/70725G03F9/7073
Inventor 朱煜杨开明
Owner BEIJING U PRECISION TECH
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