A three-dimensional ferroelectric memory and its preparation method

Abstract

A three-dimensional ferroelectric memory and its preparation method, comprising: a substrate (1) and a conductive layer (2) arranged on the substrate (1); The isolation layer (3) and the control gate electrode (4) are arranged; a plurality of groove holes (11) vertically penetrate the laminated structure, and the groove bottoms of the groove holes (11) are embedded in the conductive layer (2); the groove A first dielectric layer (6), a ferroelectric thin film layer (7), a second dielectric layer (8), a channel layer (9) and a filling layer (10) are sequentially laid on the side wall and bottom of the hole (11), to form a plurality of trench-type memory cell strings (5). Storage cells can be formed on both sides of the trench-type memory cell string (5), which can obtain more compact wiring and is conducive to achieving higher density integration; and trench-type memories can be prepared by depositing the required materials in sequence without Etching, without affecting the quality of the deposited material, can guarantee the reliability of the memory.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a three-dimensional ferroelectric memory and a preparation method thereof. Background technique [0002] Transistor type ferroelectric memory - ferroelectric field effect transistor (FeFET) is to replace the gate dielectric layer in field effect transistor (MOSFET) with ferroelectric thin film material, and control the conduction of channel current by changing the polarization direction of ferroelectric thin film material Pass and cut off, so as to realize the storage of information. FeFET memory has the advantages of non-volatility, low power consumption, fast read and write speed, etc., and the unit structure is simple, and the theoretical storage density is large. Therefore, FeFET memory is considered to be one of the most potential new memory. [0003] However, for a long time, the actual storage density of FeFET memory is quite different from the theoretical value, which al...

AI Technical Summary

Problems solved by technology

However, the three-dimensional integration technology that can guarantee high-density integration, low-cost production and high reliability at the same time remains to be broken through

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