Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self-induction and self-acceleration bidirectional level conversion circuit

A conversion circuit, self-acceleration technology, applied in the direction of bidirectional operation of logic circuit coupling/interface, logic circuit, logic circuit interface device, etc., can solve problems such as one-way conversion of level

Active Publication Date: 2020-10-23
58TH RES INST OF CETC
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a self-induction and self-acceleration bidirectional level conversion circuit to solve the problem that the existing level conversion circuit can only realize one-way conversion between levels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-induction and self-acceleration bidirectional level conversion circuit
  • Self-induction and self-acceleration bidirectional level conversion circuit
  • Self-induction and self-acceleration bidirectional level conversion circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The invention provides a self-induction and self-acceleration bidirectional level conversion circuit. By setting a self-acceleration module, the port voltage is pulled up transiently and quickly to achieve rapid level conversion; the built-in direction self-induction module can allow the device to sense and control the direction of data flow without the need for a direction control pin; not only can it convert between specific dual power supply voltages, but it also has a relatively wide voltage conversion range; it can not only convert from low voltage to high voltage, but also Convert from high voltage to low voltage.

[0029] Such as figure 2 As shown, the self-induction self-acceleration bidirectional level conversion circuit includes a self-acceleration module, a direction self-induction module, a transmission tube, a pull-up path and a grid voltage VG generation circuit. The self-acceleration module pulls up the port voltage transiently and quickly to realize fa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a self-induction and self-acceleration bidirectional level conversion circuit, and belongs to the technical field of electronic circuits. The circuit is simple in structure, good in working performance, high in conversion speed and higher in working frequency under the common CMOS process; not only can conversion be carried out between specific double-path power supply voltages, but also a relatively wide voltage conversion range is achieved; and an independent direction control bidirectional conversion function is built in, so that the device can sense and control thedata flow direction, and a direction control pin is not needed. Not only can a low voltage be converted into a high voltage, but also the high voltage can be converted into the low voltage. Digital level conversion and matching work among most of current systems can be well completed. The circuit is less affected by temperature, power supply voltage and process. Therefore, the self-induction and self-acceleration bidirectional level conversion circuit applied to the field of signal transmission provided by the invention can greatly improve the level conversion efficiency, and has an importantapplication value.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to a self-induction self-acceleration bidirectional level conversion circuit. Background technique [0002] As modern electronic systems run faster and faster, and the amount of data processed in parallel increases, in order to reduce the power consumption of core processors, a large number of core processor systems powered by low voltage have been produced. To transmit information between systems using two different logic standards, it is necessary to use corresponding logic level conversion circuits to realize data conversion between chips with different supply voltages. [0003] A traditional level shifter circuit such as figure 1 Shown, input in, its high level is vdd, output out, its high level is vdda. When the input in changes from vss to vdd, the MOS tubes MN1 and MP2 are turned on, the MOS tubes MN2 and MP1 are turned off, and the output level is pulled up to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K19/0175H03K19/017H03K19/013
CPCH03K19/001H03K19/0013H03K19/013H03K19/017H03K19/017518H03K19/01759
Inventor 李珂
Owner 58TH RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com