Preparation method of semiconductor device

Abstract

The invention relates to a preparation method of a semiconductor device. The preparation method comprises the steps of providing a semiconductor substrate comprising a primitive cell region and a non-primitive cell region; forming a first field oxide and a second field oxide on the non-primitive cell region, forming a gap between the first field oxide and the second field oxide, and forming a semiconductor layer on the two field oxides and the gap; performing well injection on the primitive cell region to form a well region; forming a working structure in the primitive cell region, and forminga protection structure on the non-primitive cell region; and forming an interlayer dielectric layer on the working structure and the protection structure, forming a contact hole in the interlayer dielectric layer above the working structure, the first field oxide and the second field oxide, forming a metal interconnection layer connected with the contact hole on the interlayer dielectric layer, and connecting the working structure and the protection structure through the metal interconnection layer and the contact hole. Through the first field oxide and the second field oxide, the metal interconnection opening region can be located in a region above the gap between the two field oxides, and the height difference between the region and the primitive cell region is only the height of the semiconductor layer, so that the risk that the semiconductor layer is damaged can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a semiconductor device. Background technique [0002] Semiconductor devices usually include a working structure and a protective structure for protecting the working structure, such as a metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, hereinafter referred to as a MOS tube) during production, assembly, testing or handling Static electricity may be generated during the process. When the electrostatic voltage is high, the MOS tube will be damaged. Therefore, a diode is usually added as an electrostatic protection (ESD) structure in parallel with the MOS tube to protect the MOS tube. [0003] In the specific manufacturing process of semiconductor devices, field oxygen is usually formed in the non-primary cell region of the semiconductor substrate as an isolation ring, and the self-aligned well implant...

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Problems solved by technology

[0005] Based on this, it is necessary to propose a new semiconductor device preparation method for the technical problem that the interlayer dielectric layer above the protective structure is thinner in the semiconductor device formed by the current semiconductor device preparation method

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