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Memory device having high resistivity thermal barrier wall

A technology of resistivity and memory cells, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of interference state, heat dissipation, etc.

Pending Publication Date: 2020-11-03
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The heat generated can be dissipated to nearby components such as memory cells and in some cases can interfere with the state stored by other memory cells

Method used

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  • Memory device having high resistivity thermal barrier wall
  • Memory device having high resistivity thermal barrier wall
  • Memory device having high resistivity thermal barrier wall

Examples

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Embodiment Construction

[0017] A memory device may include one or more optional memory cells comprising several components, such as cell components, arranged in a stack. The one or more unit components may be in contact with other components such as electrodes. In some cases, the outermost electrodes may be in contact with barrier ribs (eg, tungsten silicon nitride (WSiN) barrier ribs), which in turn may be in contact with access lines (eg, word lines or digit lines). The barriers can be configured to prevent molecular diffusion between the outermost electrodes and corresponding access lines (eg, the barriers can be examples of diffusion barriers). Additionally, the barriers can be configured to allow one or more electrical signals (eg, programming signals) to pass through the barriers.

[0018] However, applying a signal (e.g., a programming signal or other signal) to a memory cell can generate thermal energy (e.g., heat, such as latent heat) at the memory cell, which can be dissipated or dissipate...

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PUM

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Abstract

The invention relates to a memory device with a high resistivity thermal barrier wall. In some examples, a barrier material may be positioned over a memory cell region, an oxide region, and / or a through silicon via (TSV). The barrier may include a first region over the memory cell region and a second region over the TSV. Processes such as plasma processing may be applied to the barrier, which mayresult in the first and second regions having different thermal resistivity (e.g., different densities). Accordingly, due to the different thermal resistivity, the memory cell may be thermally isolated from thermal energy generated in the memory device.

Description

[0001] cross reference [0002] This patent application claims priority to U.S. Patent Application No. 16 / 400,927, entitled "MEMORY DEVICE WITH HIGH RESISTIVITY THERMAL BARRIER," filed May 1, 2019 by Economy et al. right, said U.S. patent application assigned to the present assignee and expressly incorporated herein by reference in its entirety. technical field [0003] The technical field relates to memory devices having high resistivity thermal barriers. Background technique [0004] The following generally relates to systems with memory devices, and more specifically to memory devices with high-resistivity thermal barriers. [0005] Memory devices are widely used to store information in a variety of electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming different states of the memory device. For example, a binary device has two states, typically represented as a logic "1" or a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/528H01L21/768
CPCH01L21/76897H01L21/76847H01L21/76852H01L23/5286H01L23/36H01L21/321H01L21/76841H01L21/76856H01L21/2855H01L23/3736H01L21/02186H01L21/768H01L23/535H01L21/0234
Inventor D·R·埃科诺米郑鹏园
Owner MICRON TECH INC