Trench type field effect transistor and method of forming the same
A field-effect transistor and trench-type technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increased chip area and cost, inability to adapt to devices, multi-area, etc., to alleviate height differences, The effect of simplifying the preparation process and improving the pressure resistance
Inactive Publication Date: 2021-06-18
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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Problems solved by technology
[0004] However, the effect of using multiple field rings to reduce the electric field is limited. Even by increasing the number of field rings, the withstand voltage performance can only be improved within a certain range, and it cannot adapt to devices with gradually increasing withstand voltage requirements, and the increase in the number of field rings Also occupies more area, resulting in increased chip area and cost
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[0047] The trench type field effect transistor and its forming method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0048] figure 1 It is a structural schematic diagram of a trench type field effect transistor in an embodiment of the present invention, such as figure 1 As shown, the trench field effect transistor includes: a transistor unit and a terminal structure formed in the substrate 100 .
[0049] Specifically, the substrate 100 has a cell region 100A and a terminal region 100B, and the transistor unit is formed in the cell region 100A, and the termina...
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Abstract
The invention provides a trench type field effect transistor and a forming method thereof. By setting a trench-type terminal structure in the terminal region and making the second dielectric layer in the terminal structure have a larger thickness, the withstand voltage capability of the device is improved, which is beneficial to reduce the size of the device. And, for the second dielectric layer in the second groove closest to the boundary of the cell area, it specifically includes a thin layer part and a thick layer part, and the thin layer part can be combined with the preparation of the first dielectric layer in the cell area The process is formed at the same time, which not only helps to simplify the preparation process, but also alleviates the height difference between the cell region and the terminal region at the junction.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a trench type field effect transistor and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, the performance requirements of devices are also continuously improved. For trench field effect transistors, how to further improve their withstand voltage performance has always been a problem of great concern in this field. [0003] At present, in order to improve the withstand voltage performance of trench field effect transistors, a terminal ring is usually provided around the transistor unit, and a terminal structure is formed in the terminal area to protect the cell area. And improve the lateral withstand voltage capability of the device to avoid breakdown of the device. An existing termination structure is, for example, forming a plurality of field rings in the substrate of the termination region, so as to u...
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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0615H01L29/0684H01L29/66477H01L29/78
Inventor 任志远李艳旭宋金星
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP