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Area array back incidence type solar blind ultraviolet detector and preparation method thereof

An ultraviolet detector and back-incidence technology, which is applied in the field of photodetectors, can solve the problems such as the inability to apply large-area arrays in the form of wire bonding packaging, increase the design difficulty and manufacturing cost, etc., so as to increase the effective incident area and improve the process reliability. , the effect of improving detection efficiency

Inactive Publication Date: 2020-11-13
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In practical applications, solar-blind ultraviolet detectors with large-area arrays are most needed. If the traditional front-incidence structure is adopted, the package form of wire bonding will not be applicable to large-area arrays. The special protection of the joint wire increases the design difficulty and manufacturing cost

Method used

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  • Area array back incidence type solar blind ultraviolet detector and preparation method thereof
  • Area array back incidence type solar blind ultraviolet detector and preparation method thereof
  • Area array back incidence type solar blind ultraviolet detector and preparation method thereof

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preparation example Construction

[0043] Please refer to figure 1 , figure 1 It is a schematic flow chart of the preparation method of the area array back-incidence solar-blind ultraviolet detector provided by an embodiment of the present invention. The preparation method of the surface array back-incidence solar-blind ultraviolet detector comprises:

[0044] S101: preparing a device layer of a solar-blind ultraviolet detector on a sapphire substrate to obtain an APD array wafer.

[0045] S102: The APD array chip is packaged upside down on the circuit substrate, and the sapphire substrate of the APD array chip is peeled off by laser lift-off technology to obtain a surface array back-incidence solar-blind ultraviolet detector.

[0046] In this example, you can refer to Figure 2-Figure 5 The front side of the APD array chip is the side on which the electrodes are arranged, and the APD array chip is packaged upside down on the circuit substrate, even if the electrodes of the APD array chip are in contact with...

specific Embodiment approach

[0075] Optionally, as a specific implementation of the area array back-incidence solar-blind ultraviolet detector provided in the embodiment of the present invention, the APD array wafer includes:

[0076] A sapphire substrate, an alignment mark located in a first predetermined area of ​​the sapphire substrate, and a plurality of APD units located in a second predetermined area of ​​the sapphire substrate.

[0077] The alignment mark is used to indicate the packaging position of the APD array chip, and a plurality of APD units are arranged at preset intervals.

[0078] Optionally, as a specific implementation of the area array back-incidence solar-blind ultraviolet detector provided in the embodiment of the present invention, the APD unit includes:

[0079] An N-type ohmic contact layer grown on a sapphire substrate.

[0080] A type I light absorbing layer grown on an N type ohmic contact layer.

[0081] A P-type ohmic contact layer grown on an I-type light absorbing layer. ...

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Abstract

The invention provides an area array back incidence type solar blind ultraviolet detector and a preparation method thereof, and the preparation method of the area array back incidence type solar blindultraviolet detector comprises the steps: preparing a device layer of the solar blind ultraviolet detector on a sapphire substrate, and obtaining an APD array wafer; and inversely packaging the APD array wafer on a circuit substrate, and stripping a sapphire substrate of the APD array wafer by adopting a laser stripping technology to obtain the area array back incidence type solar blind ultraviolet detector. According to the area array back incidence type solar blind ultraviolet detector and the preparation method thereof provided by the invention, the process difficulty and the manufacturingcost of the solar blind ultraviolet detector can be reduced.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detectors, and more specifically relates to a surface array back-incidence solar-blind ultraviolet detector and a preparation method thereof. Background technique [0002] The solar-blind ultraviolet wavelength range is 200-285nm, and there is almost no solar-blind ultraviolet radiation near the surface. Therefore, compared with infrared detectors and visible light detectors, solar-blind ultraviolet detectors can effectively shield the interference of sunlight and other natural light sources. Military fields such as missile early warning and tracking, ultraviolet communication, and civilian fields such as power monitoring and fire alarm have received extensive attention. [0003] In practical applications, solar-blind ultraviolet detectors with large-area arrays are most needed. If the traditional front-incidence structure is adopted, the package form of wire bonding will not be applicable t...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L27/144H01L31/0203H01L31/0224
CPCH01L27/1446H01L27/1443H01L31/022408H01L31/0203H01L31/186Y02E10/50Y02P70/50
Inventor 谭鑫周幸叶吕元杰王元刚宋旭波韩婷婷冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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