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Magnetic random access memory device and manufacturing method thereof

A technology of random storage and devices, which is applied in static memory, digital memory information, manufacturing/processing of electromagnetic devices, etc., to achieve the effect of reducing series resistance, solving open circuit problems, and being easy to remove

Pending Publication Date: 2020-11-13
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a magnetic random access memory device and a manufacturing method thereof, which can solve the problem of interconnection with the top electrode when the MTJ unit of high-density MRAM is prepared

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  • Magnetic random access memory device and manufacturing method thereof
  • Magnetic random access memory device and manufacturing method thereof
  • Magnetic random access memory device and manufacturing method thereof

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Embodiment Construction

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques a...

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Abstract

The invention provides a magnetic random access memory device and a manufacturing method thereof. The device includes: a substrate on which a bottom electrode is formed, a magnetic tunnel junction unit located above the bottom electrode, a metal hard mask located above the magnetic tunnel junction unit, a first dielectric layer, a second dielectric layer and a top electrode. The vertical part of the first dielectric layer covers the magnetic tunnel junction unit and the side wall of the metal hard mask. The horizontal part of the first dielectric layer covers the upper surface of the bottom electrode, the second dielectric layer is located above the horizontal part of the first dielectric layer and surrounds the vertical part of the first dielectric layer, and the top electrode covers theupper surface of the metal hard mask. According to the invention, the problem of interconnection with the top electrode during preparation of the MTJ unit of the high-density MRAM can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a magnetic random access memory device and a manufacturing method thereof. Background technique [0002] In recent years, magnetic random access memory (MRAM) using the magnetoresistance effect of magnetic tunnel junction (MTJ, Magnetic Tunnel Junction) is considered to be the future solid-state non-volatile memory, which has high-speed reading and writing, large capacity and low energy consumption. features. The MRAM device includes a logic area and a storage area, the logic area is mainly a switching device, the storage area is mainly an MTJ device, and the MTJ device includes a bottom electrode, an MTJ unit and a top electrode. [0003] At present, in the preparation process of MTJ devices, MTJ units are usually fabricated into independent cylindrical structures, and then covered with a dielectric protective layer in situ to prevent oxidation with the outside wo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12G11C11/16H10N50/10H10N50/01
CPCG11C11/161H10N50/10H10N50/01
Inventor 申力杰张栋山
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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