Device for preparing high-purity nano indium oxide powder

Abstract

The invention discloses a device for preparing high-purity nano indium oxide powder. The method comprises a reaction box body for indium sublimation and oxidation, wherein a bin door is arranged on the reaction box body, a crucible for containing indium powder is arranged in the reaction box body, a high-frequency induction coil for heating the crucible is arranged below the crucible, an O2 gas cylinder is connected with the reaction box body through a pipeline provided with a ball valve switch, a vacuum pump is connected with the reaction box body through a pipeline provided with a ball valveswitch, and a vacuum degree meter is further arranged on the reaction box body. According to the invention, by adopting the scheme, a special high-temperature reaction chamber and an atomizer do notneed to be specially arranged; compared with a precipitation method, the method of the invention does not generate waste liquid, does not need to treat the waste liquid, does not need a washing and centrifuging process, does not need a high-temperature calcining link, and is beneficial to environmental protection and water resource and energy conservation; and compared with a solid-phase method, the method of the invention has the following characteristics that indium vapor is oxidized with oxygen at high temperature, and the nano indium oxide powder with high purity, uniform particle size andhigh sintering activity can be prepared.

Description

Technical field [0001] The invention belongs to the field of ITO target material preparation, and in particular relates to a device for preparing high-purity nano indium oxide powder by sublimation method. Background technique [0002] Most of the transparent electrodes used in flat panel display devices are ITO films, which require fewer defects, uniform quality, high flatness, and good conductivity. This ITO film is prepared by magnetron sputtering from an ITO target. Therefore, in order to obtain a high-quality ITO film, the ITO target must have high density, high purity, fewer defects, and crystal grain size. Evenly. The ITO target is made of indium oxide and tin oxide powder with a mass ratio of 9:1 through mixing, granulating, molding, and sintering. Indium oxide powder occupies most of the raw materials. Therefore, the preparation of indium oxide powder with high purity, uniform particle size and high sintering activity is very important for the preparation of high-end I...

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Problems solved by technology

This method is more common, but there are many steps, and the process of high temperature calcination is required, and the process control is more complicated.

In addition, more waste liquid is produced, which pollutes the environment, and the sediment needs to be washed several times, which wastes water.

The solid-phase method is divided into high-temperature solid-phase reaction method, room temperature solid-phase reaction method, etc. The disadvantage of the solid-phase method is that the purity of the generated indium oxide powder is difficult to guarantee, and the reaction is difficult to reach the nanometer scale, and the particles of the generated powder are relatively large

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