Method and device for measuring interstitial oxygen content of monocrystalline silicon
A single crystal silicon and oxygen content technology, applied in the direction of measuring devices, material analysis through optical means, instruments, etc., can solve the problems of result error, increase of sample oxygen content, and influence on the correct evaluation of silicon wafer quality, so as to improve accuracy , to ensure the consistency of the effect
Pending Publication Date: 2020-11-20
XIAN ESWIN MATERIAL TECH CO LTD +1
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Problems solved by technology
However, in the detection process of GFA, when the sample is cleaned and placed in the crucible for calcination, due to the inability to accurately control the waiting time, the sample will be oxidized during this period of time, and this part of the oxygen will be calculated Into the oxygen content of the sample, resulting in errors in the final results
On the one hand, it leads to an increase in the oxygen content of the sample, which affects the correct evaluation of the quality of the silicon wafer; on the other hand, due to the uncertainty of the waiting time, the degree of oxidation on the surface of the sample is inconsistent, resulting in the inaccuracy of subsequent multi-sample data correction, and finally Leads to evaluation of wafer quality
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[0033] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention belong to the protection scope of the present invention.
[0035] like figure 1 As shown, when the related art uses GFA (Gas Fusion Analysis) to measure the interstitial oxygen content of single crystal si...
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The invention provides a method and device for measuring the interstitial oxygen content of monocrystalline silicon, and belongs to the technical field of semiconductors. The method for measuring theinterstitial oxygen content of the monocrystalline silicon comprises the following steps: cutting a monocrystalline silicon sample into monocrystalline silicon sample blocks with fixed sizes; forminga protective film coating the surface of the monocrystalline silicon sample block, wherein the protective film does not contain an oxygen element; calcining the monocrystalline silicon sample block, and detecting the gas obtained by calcining to obtain the oxygen content of the monocrystalline silicon sample block. The method can effectively improve the accuracy of the oxygen content data.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and a device for measuring the oxygen content in the gap of single crystal silicon. Background technique [0002] During the process of large-size semiconductor-grade single-crystal silicon wafers, oxygen decomposes from the quartz crucible into the silicon rods, occupying the interstitial position of the single-crystal silicon lattice. Due to the segregation mechanism, during the growth of the melt, the distribution of impurities is determined by their segregation coefficient in the melt. The segregation coefficient of oxygen in silicon is <1, and oxygen tends to accumulate towards solid silicon during crystal growth. . The distribution of oxygen in the axial direction of the ingot gradually decreases from the head to the tail, while the distribution in the radial direction is determined by the shape of the solid-liquid interface. [0003] Knowing the oxygen...
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IPC IPC(8): G01N21/3504G01N21/3563
CPCG01N21/3504G01N21/3563G01N2021/3568G01N2021/3572
Inventor 衡鹏徐鹏
Owner XIAN ESWIN MATERIAL TECH CO LTD