Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device with embedded magnetic flux concentrator

A technology of magnetic flux and concentrator, applied in semiconductor/solid-state device components, devices applying electro-magnetic effect, electric solid-state devices, etc.

Pending Publication Date: 2020-11-24
メレクシステクノロジーズソシエテアノニム
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, reducing the size of integrated magnetic sensors is also desirable, but it may be difficult to combine magnetic sensing structures with magnetic flux concentrators to provide sufficient sensitivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device with embedded magnetic flux concentrator
  • Semiconductor device with embedded magnetic flux concentrator
  • Semiconductor device with embedded magnetic flux concentrator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The present invention will be described with respect to particular embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims.

[0041] Furthermore, the terms first, second, etc. in the description and in the claims are used to distinguish between similar elements and not necessarily to describe an order temporally, spatially, in ranking or in any other way. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in sequences other than described or illustrated herein.

[0042] It should be noted that the term "comprising", used in the claims, should not be interpreted as being restricted to the means listed thereafter; it does not exclude other elements or steps. Accordingly, the term should be interpreted as specifying the presence of stated features, integers, steps or components as refer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

Disclosed is a semiconductor device with an embedded magnetic flux concentrator. The present invention relates to a magnetic flux concentrator (MFC) structure, which comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, orin both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

Description

technical field [0001] The present invention relates generally to the field of semiconductor devices with magnetic flux concentrators and magnetic sensors. Background technique [0002] Sensors are widely used in electronic devices to measure properties of the environment and report the measured sensor values. In particular, magnetic sensors are used to measure magnetic fields, eg in transportation systems such as automobiles. Magnetic sensors may include Hall effect sensors that generate an output voltage proportional to an applied magnetic field, or may include magnetoresistive materials whose resistance changes in response to an external magnetic field. In many applications, it is desirable for the magnetic sensor to be small and sensitive and integrated with electronic processing circuitry in order to reduce the overall magnetic sensor size and provide improved measurement and integration into external electronic systems. [0003] US9857437 B2 describes a Hall-effect m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/14G01R33/04H10N52/00H10N52/01H10N52/80
CPCG01R33/04H10N52/01H10N52/101G01R33/0011G01R33/02H01L23/5226H01L23/528H01L23/58H10N52/80
Inventor A·J·范德维尔
Owner メレクシステクノロジーズソシエテアノニム
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com