Memory structure and forming method thereof

Abstract

The invention relates to a storage structure and a forming method thereof. The storage structure comprises: a semiconductor substrate, wherein a plurality of discrete active regions arranged in rows and columns are formed on the semiconductor substrate, a first groove is arranged between adjacent active regions, and the first groove is filled with an insulating layer; two second grooves located ineach active region and distributed in the row direction, wherein each active region is divided into a drain electrode located in the middle and two source electrodes located on the two sides of the drain electrode through the two second grooves; third grooves located in part of the insulating layers on the two sides of the bottoms of the second grooves, wherein at least part of the surfaces of the side walls of the two sides of the active region on the bottoms of the second grooves are exposed out of the third grooves, the third grooves are communicated with the corresponding second grooves,and every two adjacent third grooves in the row direction are not communicated; and gate structures positioned in the second grooves and the third grooves. According to the storage structure, the magnitude of leakage current is reduced.

Description

technical field [0001] The invention relates to the field of memory, in particular to a memory structure and a forming method thereof. Background technique [0002] Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is a semiconductor storage device commonly used in computers, which consists of many repeated storage units. Each memory cell usually includes a capacitor and a transistor. The gate of the transistor is connected to the word line, the drain is connected to the bit line, and the source is connected to the capacitor. The voltage signal on the word line can control the opening or closing of the transistor, and then through the bit line Read the data information stored in the capacitor, or write the data information into the capacitor through the bit line for storage. [0003] However, the storage structure composed of capacitors and transistors in the existing memory has the problem of leakage current, and the performance of the memory still needs to...

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Problems solved by technology

[0003] However, the storage structure composed of capacitors and transistors in the existing memory has the problem of leakage current, and the performance of the memory still needs to be improved.

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