Global bias scheme suitable for multi-channel phased array and embedded current mirror amplifying circuit technology

Abstract

The invention discloses a global bias scheme suitable for a multi-channel phased array and an embedded current mirror amplification circuit technology. The embedded current mirror amplification circuit is structurally characterized in that a capacitor-neutralized common-source differential amplifier structure is adopted, and transistor parts (218 and 220) are composed of first amplification tubes(202), second amplification tubes (204), first mirror tubes (206) and second mirror tubes (208). The transistor parts (218, 220) in the structural characteristics of the embedded current mirror amplifying circuit embed a mirror image tube area (304) into an amplifying tube area (302) in the process characteristics, so that the randomness of process size errors is reduced, and high-precision matching of the transistor and the mirror image tube size is realized. On the basis of the technology, a global bias scheme suitable for a phased array system is provided, and the consistency of all channels of the phased array is effectively improved. The technology is suitable for the design of the high-gain millimeter wave amplifier in the multi-channel millimeter wave phased array application.

Description

technical field [0001] The present invention relates to the technical field of electronic circuit design, and relates to a global biasing scheme suitable for multi-channel phased arrays and an embedded current mirror amplification circuit technology, and is especially suitable for amplifying circuits and system biasing in millimeter wave frequency band phased array systems. set design. Background technique [0002] The millimeter wave frequency band has become a research hotspot in recent years due to its rich spectrum resources. Millimeter wave communication is facing the problem of serious attenuation in the process of signal propagation, and the research of phased array technology has become the key to solve this problem. The phased array system realizes the mutual superposition of electromagnetic waves by controlling the phase of the signals transmitted by each antenna. Multi-antenna transmission can increase the signal transmission power, and the superposition of signa...

AI Technical Summary

Problems solved by technology

However, in the actual chip tape-out process, due to the influence of process and matching factors, there will be certain errors in the size of transistors between different chips and even in the same chip, and the randomness of size errors leads to the difference between the size of the current mirror in the amplifier and the size of the amplifier tube. Sizes are hard to match exactly

In addition, considering that parameters such as the transistor threshold voltage of different chips are also affected by process errors, it is difficult for traditional design ideas to ensure that the amplifier bias states of each channel are consistent, which greatly limits the performance of the phased array system.

In addition, the transistors in the millimeter wave band are affected by factors such as parasitic effects and modeling, and the scalability of the layout is poor. The layout matching design of the current mirror is more difficult, which puts forward higher requirements for the design of the phased array bias circuit.

[0004] Common-source amplifier is a commonly used structure in RF amplifier design, but the common-source amplifier itself has a feedback loop between the gate-drain capacitance. In RF circuit design, it will greatly reduce the gain and stability of the transistor, and even cause the transistor to oscillate.

Traditional cascode amplifiers can achieve high isolation and gain in low-frequency applications, but as the design frequency increases, taking into account the influence of high-frequency layout parasitics, cascode amplifiers The gain advantage is already very weak

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