Three-dimensional integrated system and preparation method thereof

A three-dimensional integration and through-silicon via technology, which is applied in current collectors, electric vehicles, electrical components, etc., can solve problems such as limited discharge efficiency, achieve continuous and stable energy output, reduce system volume, and improve integration.

Inactive Publication Date: 2020-12-11
FUDAN UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, batteries are generally independent energy supply components, which are difficult to directly inte

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  • Three-dimensional integrated system and preparation method thereof
  • Three-dimensional integrated system and preparation method thereof
  • Three-dimensional integrated system and preparation method thereof

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Embodiment Construction

[0088]In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other ele...

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Abstract

The invention provides a three-dimensional integrated system and a preparation method thereof. The integrated system comprises a nano generator, a nano capacitor structure, a first silicon through hole structure and a second silicon through hole structure. The method comprises the following steps: selecting an etching substrate, etching a plurality of silicon nano holes in the surface of the etching substrate, and preparing to obtain the nano capacitor structure; preparing the nano generator with a common electrode on the surface of the nano capacitor structure; processing the two sides of thetop of the nano generator to obtain the first silicon through hole structure and the second silicon through hole structure; and carrying out metal wiring in the first silicon through hole structure and the second silicon through hole structure to achieve conduction connection between the nano capacitor structure and the nano generator in order to obtain the final integrated system. Electric energy generated by the piezoelectric generator is stored in the nano capacitor structure to obtain continuous and stable energy output. The whole system is easy to miniaturize and occupies a small area.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing technology, in particular to a three-dimensional integrated system and a preparation method. Background technique [0002] In addition to the miniaturization technology development route of devices led by Moore's Law, functional micro-nano devices are integrated to form a multi-functional micro-nano device system, and realize human health, environmental monitoring, human-computer interaction, personal electronics and biological diagnosis. The importance of large-scale networks has become increasingly prominent. Integrating embedded energy harvesting devices to form an intelligent self-powered system is an important aspect of the development of electronic devices. Self-powered devices can convert energy in the environment, such as thermal energy, solar energy, and mechanical energy, into electrical energy. Among them, nanogenerators have good prospects in self-supply, whic...

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Application Information

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IPC IPC(8): H01L41/047H01L41/113H01L41/317H02J7/32H02N2/18
CPCH02N2/18H02J7/32H10N30/875H10N30/30H10N30/077
Inventor 朱宝陈琳孙清清张卫
Owner FUDAN UNIV
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