Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of topological quantum single crystal Cu3TeO6

A quantum, single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of difficult crystallization, high crystal melting point, difficult to grow single crystal, etc., to achieve the effect of perfect crystal shape and easy separation

Active Publication Date: 2020-12-18
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current growth process for this crystal is facing challenges. The crystal has a high melting point, which has higher requirements for crystal growth equipment and crucibles, and crystallization is difficult, and it is difficult to grow large-sized single crystals.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of topological quantum single crystal Cu3TeO6
  • Preparation method of topological quantum single crystal Cu3TeO6
  • Preparation method of topological quantum single crystal Cu3TeO6

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0054]Raw materials are made of CuO, TeO2, PbCl2Composition, of which PbCl2It is used as a flux. CuO:TeO in molar ratio2:PbCl2 =1:0.9-1.5 (preferably 1.12): 0.2-0.4 (preferably 0.375) Weigh the raw materials, grind and mix them uniformly, and put them into a platinum crucible. Put the platinum crucible into the molten salt furnace, adjust the center, tie the platinum wire to the end of the seed rod, install the rod on the furnace frame, adjust the center, the platinum crucible should face the center of the platinum crucible, and ensure the furnace, crucible and seed rod In a straight line, close the furnace lid. Raise the temperature to 860~950℃ (preferably 950℃), keep the temperature for 1~4d (preferably 1~2d), lower the platinum wire and cool down at a rate of 5~10℃ / h (preferably 5~8℃ / h) for crystal growth Determine the saturation point to be 815~790℃, and then increase the temperature to 820℃ to avoid supersaturation. After returning to 820℃, slowly lower the temperature at a ra...

Embodiment 1

[0058]Raw materials are made of CuO, TeO2, PbCl2Composition, of which PbCl2It is used as a flux. CuO:TeO in molar ratio2:PbCl2= 1:1.12:0.375 Weigh the raw materials, grind and mix them evenly, and put them into a platinum crucible. Put the platinum crucible into the molten salt furnace, adjust the center, tie the platinum wire to the end of the seed rod, install the rod on the furnace frame, adjust the center, the platinum crucible should face the center of the platinum crucible, and ensure the furnace, crucible and seed rod In a straight line, close the furnace lid. Raise the temperature to 950°C, hold the temperature for 1d, lower the platinum wire, cool down at a rate of 5°C / h for crystal growth, determine the saturation point to be 815-790°C, and then raise the temperature to 820°C to avoid supersaturation. After returning to 820°C, slowly lower the temperature at a rate of 0.02°C / h for crystal growth. When the crystal size is large enough, the crystal is lifted up to 807°C, and...

Embodiment 2

[0060]The difference from Example 1 is that the molar ratio is CuO:TeO2:PbCl2=1:0.9:0.2 scale; heat up to 860℃, keep the temperature for 4d, lower platinum wire, cool down at a rate of 8℃ / h for crystal growth, determine the saturation point to be 815~790℃, and then heat up to 830℃ to avoid oversaturation . After returning to 830℃, slowly lower the temperature at a rate of 0.05℃ / h for crystal growth. When the crystal size is large enough, lift the crystal and then reduce to 760℃ at a rate of 18℃ / h, and heat and anneal for 24h , And then drop to room temperature at a rate of 40°C / h. Open the furnace to take out the crystals. Recorded as sample 2#.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a topological quantum single crystal Cu3TeO6. In the preparation method, the topological quantum single crystal Cu3TeO6 is prepared by adopting a moltensalt method, and the preparation method comprises the following steps: growing a mixture containing raw materials and a fluxing agent to obtain the topological quantum single crystal Cu3TeO6; whereinthe raw materials comprise a Cu source and a Te source; and the fluxing agent is PbCl2. The preparation method provided by the invention can be used for growing large single crystals, and is perfectin crystal form and easy to separate.

Description

Technical field[0001]This application relates to a topological quantum single crystal Cu3TeO6The preparation method belongs to the technical field of crystal preparation.Background technique[0002]Recently, a study reported that the three-dimensional antiferromagnet Cu3TeO6 was studied using neutron scattering combined with theoretical simulations. For the first time, three-dimensional topological magnon excitation was observed in a real material system. In the topological magnon system, the non-zero Bailey curvature will cause the electrically neutral magnon to have an abnormal thermal Hall effect, and the non-trivial band structure will make the system appear topologically protected surface states. These properties make the topological Magnetonic materials have very important application prospects in the development of new electronic spin devices with high efficiency and low dissipation.[0003]However, the current growth process for this crystal faces challenges. The crystal has a r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B9/12
CPCC30B29/22C30B9/12
Inventor 何长振李锦阳
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI