Hydride vapor phase epitaxy gallium boat structure

A hydride gas phase and epitaxy technology, which is applied in the direction of chemically reactive gases, chemical instruments and methods, single crystal growth, etc., can solve the problems of low hydrogen chloride gas conversion efficiency and small contact area

Active Publication Date: 2020-12-25
紫石能源有限公司
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Problems solved by technology

[0007] The purpose of the present invention is to provide a gallium boat structure of hydride vapor phase epitaxy, to solve the problem that the contact area between hydrogen chloride gas and liquid gallium in the prior art is small and easy Technical problems causing low conversion efficiency of hydrogen chloride gas

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  • Hydride vapor phase epitaxy gallium boat structure
  • Hydride vapor phase epitaxy gallium boat structure

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Embodiment Construction

[0025] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0026] In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it may be mechanically connected or electrically connected; it may be directly connected or indirectly connected through an intermediary, and it may be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

[0027] Such as figure ...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a hydride vapor phase epitaxy gallium boat structure which comprises a boat body, and further comprises a gallium source inlet formed in the top of the boat body. A liquid gallium source is contained in the boat body. A reactant outlet pipeline arranged in the boat body, the top end of thereactant outlet pipeline is higher than the liquid level of theliquid gallium source, the bottom end of the reactant outlet pipeline penetrates out of the bottom wall of the boat body; a gas distribution disc is also arranged on thebottom wall in the boat body, a hydrogen chloride inlet is formed in the side face of the gas distribution disc, at least one hydrogen chloride outlet is formed in the top end of a pipeline of the gas distribution disc, and each hydrogen chloride outlet is located below the liquid level of the liquid gallium source. The gallium boat structure has the advantages that the hydrogen chloride conversion rate is high, the contact area of hydrogen chloride and a liquid gallium source is large, and the hydrogen chloride path is effectively prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium boat structure of hydride vapor phase epitaxy. Background technique [0002] Compared with MOCVD (metal organic vapor deposition) technology, HVPE (Hydride Vapor Phase Epitaxy) technology has the advantages of relatively high growth rate and greatly reduced source cost, and has increasingly become a new method for vapor phase growth of III-V compounds. This method has been used for the growth of GaN (gallium nitride) substrates and is being studied for the growth of GaAs (gallium arsenide) devices. In the method, hydrogen chloride reacts with liquid gallium to generate gallium monochloride, which is introduced into a growth region to react with arsine or ammonia. Taking the formation of gallium arsenide as an example, the following reactions take place: [0003] Ga(l)+HCl(g)→GaCl(g)+H 2 (g); [0004] GaCl(g)+AsH3(g)→GaAs(s)+HCl(g)+H 2 (g); [0005] As a key...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14C30B29/42
CPCC30B25/14C30B29/42
Inventor 庞云玲
Owner 紫石能源有限公司
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