High-voltage flip-chip semiconductor light-emitting element
A light-emitting element and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, electric solid devices, etc., can solve the problems of uneven brightness and darkness of high-voltage flip-chips, reduction, and inability to meet the requirements of light uniformity, so as to solve the problem of uneven brightness. average effect
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Embodiment 2
[0081] As mentioned in Example 1, as Figure 12 The Bragg reflective layer stack structure shown includes the lowermost layer 1101 as a layer between the periodically repeated film layer and the semiconductor light-emitting sequence, and the periodic reflective film layer is an ion source assisted coating to obtain a first insulating material 1102 with high reflectivity and a second insulating material 1102 Two insulating materials 1103, the lowermost layer 1101 completely covers the sidewalls of the semiconductor light-emitting sequence, the surface of the transparent conductive layer and the surface of the interconnection line, and can protect the sidewalls of the semiconductor layer and the surface of the transparent conductive layer from being damaged Ion source assisted coating process destruction.
[0082] Such as Figure 16 As shown, the improvement of this embodiment is that the transparent isolation layer 105 covers the sidewall of the entire semiconductor light emit...
Embodiment 3
[0086] Such as Figure 17~18 As shown, the difference from Embodiment 2 is that, when viewed from the side of the first pad electrode 111 and the second pad electrode 112, the transparent isolation layer partially covers the upper surface of the transparent conductive layer 106, and is transparently isolated on the surface of the transparent conductive layer 106. The shape of the layer 105 is approximately the same as that of the interconnection line 107 on the transparent conductive layer 106 and corresponding in position, so as to form a local current blocking effect. For example, the transparent isolation layer 105 is in a block shape and has a pattern area on the transparent conductive layer, such as a plurality of first openings. The interconnection line 107 forms an ohmic contact with the transparent conductive layer 106 through the plurality of first openings of the transparent isolation layer 105 . Alternatively, the first transparent transparent isolation layer 105 is...
Embodiment 4
[0091] Such as Figure 21~22 As shown, the structural feature different from the first embodiment is that, before the transparent conductive layer 105 is formed, a current blocking layer 113 is also included to partially cover the surface of the second conductivity type semiconductor layer 104 of the sub-light emitting unit. The current blocking layer 113 blocks the interconnection line 107 and the second electrode 109 from passing through the transparent conductive layer 106 and the second conductive type semiconductor layer 107 to form a vertical current flow direction, and promotes the lateral expansion of the current through the transparent conductive layer 106 . Preferably, viewed from the pad electrode side, the position and shape of the current blocking layer 113 on the surface of the second conductivity type semiconductor layer 104 are substantially consistent with those of the interconnection line 107 and the second electrode 109 .
[0092] The deposition process of t...
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