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Czochralski method single crystal furnace and melt temperature gradient control method thereof

A technology of melt temperature and control method, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as temperature rise, single crystal silicon quality decline, single crystal silicon oxygen content increase, etc., to achieve easy operation , The structure of the device is simple, the effect of improving the efficiency of crystal pulling and the quality of crystal pulling

Pending Publication Date: 2021-01-05
刘博旸
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Problems solved by technology

Correspondingly, as the overall temperature of the melt rises, the temperature of the bottom of the crucible also rises sharply, the oxygen content in the single crystal silicon also rises sharply, and the quality of the single crystal silicon drops sharply.

Method used

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  • Czochralski method single crystal furnace and melt temperature gradient control method thereof
  • Czochralski method single crystal furnace and melt temperature gradient control method thereof
  • Czochralski method single crystal furnace and melt temperature gradient control method thereof

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Embodiment

[0040] see figure 2 with image 3 , the Czochralski method single crystal furnace in this embodiment includes a furnace body 100, and disposed in the furnace body 100:

[0041] Crucible, comprising quartz crucible 200 and graphite crucible 300 wrapped outside quartz crucible 200, the bottom of graphite crucible 300 is provided with crucible shaft 301;

[0042] The heater 400 is arranged on the outside of the graphite crucible 300; the outside of the heater 400 is provided with an insulating layer 401, and the bottom of the heater 400 is provided with an electrode foot 402;

[0043] Temperature measuring device, the temperature measuring device of the present embodiment is thermocouple 500, is installed in the bottom of graphite crucible 300, and is arranged through crucible shaft 301, and the top temperature probe of thermocouple 500 is 5~10mm from the bottom of quartz crucible 200; The bottom of the thermocouple 500 has a signal data line connected to the data processor. ...

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Abstract

The invention relates to a czochralski method single crystal furnace and a melt temperature gradient control method thereof, and belongs to the technical field of monocrystalline silicon production. The czochralski method single crystal furnace comprises a furnace body, a crucible and a heater are arranged in the furnace body, the crucible comprises a quartz crucible used for containing melt and agraphite crucible wrapping the quartz crucible, the heater is arranged on the outer side of the graphite crucible, and a crucible shaft and a temperature measuring device are arranged at the bottom of the graphite crucible. The temperature measuring device penetrates through the center of the crucible shaft and is inserted into the bottom of the graphite crucible, and a signal data line connectedwith the data processor is led out of the bottom of the temperature measuring device. The temperature measuring device is arranged at the bottom of the graphite crucible and used for measuring the temperature of the bottom of the quartz crucible, the temperature change of the bottom of the quartz crucible in the crystal pulling process is obtained in real time, and therefore the power of the heater is adjusted.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon production, in particular to a Czochralski method single crystal furnace and a method for controlling the temperature gradient of the melt. Background technique [0002] In recent years, the growth technology of silicon single crystal has developed rapidly, and the lower cost and higher quality single crystal silicon has promoted the era of affordable power generation of crystalline silicon cells. [0003] The conversion efficiency of monocrystalline silicon cells is closely related to the minority carrier lifetime of monocrystalline silicon. It not only requires the minority carrier lifetime of native monocrystalline silicon to be high, but also ensures that the minority carrier life of single crystal silicon is high during the battery manufacturing process, especially during the thermal process of battery manufacturing. Life expectancy will not be greatly reduced. Oxygen is intro...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B15/20C30B29/06
CPCC30B15/00C30B15/203C30B29/06
Inventor 刘博旸
Owner 刘博旸
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