Czochralski method single crystal furnace and melt temperature gradient control method thereof

A technology of melt temperature and control method, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as temperature rise, single crystal silicon quality decline, single crystal silicon oxygen content increase, etc., to achieve easy operation , The structure of the device is simple, the effect of improving the efficiency of crystal pulling and the quality of crystal pulling

Pending Publication Date: 2021-01-05
刘博旸
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Correspondingly, as the overall temperature of the melt rises, the temperature of the bottom of the crucible also rises sharply,

Method used

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  • Czochralski method single crystal furnace and melt temperature gradient control method thereof
  • Czochralski method single crystal furnace and melt temperature gradient control method thereof
  • Czochralski method single crystal furnace and melt temperature gradient control method thereof

Examples

Experimental program
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Example Embodiment

[0039]Example

[0040]Seefigure 2 withimage 3, The Czochralski single crystal furnace of this embodiment includes a furnace body 100, and a furnace body 100 arranged in the furnace body 100:

[0041]The crucible includes a quartz crucible 200 and a graphite crucible 300 wrapped around the quartz crucible 200, the bottom of the graphite crucible 300 is provided with a crucible shaft 301;

[0042]The heater 400 is arranged on the outside of the graphite crucible 300; an insulation layer 401 is arranged on the outside of the heater 400, and electrode pins 402 are arranged on the bottom of the heater 400;

[0043]The temperature measuring device in this embodiment is a thermocouple 500, which is installed at the bottom of the graphite crucible 300 and passes through the crucible shaft 301. The top temperature probe of the thermocouple 500 is 5-10 mm away from the bottom of the quartz crucible 200; The bottom of the thermocouple 500 leads to a signal data line connected to the data processor.

[0044]I...

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Abstract

The invention relates to a czochralski method single crystal furnace and a melt temperature gradient control method thereof, and belongs to the technical field of monocrystalline silicon production. The czochralski method single crystal furnace comprises a furnace body, a crucible and a heater are arranged in the furnace body, the crucible comprises a quartz crucible used for containing melt and agraphite crucible wrapping the quartz crucible, the heater is arranged on the outer side of the graphite crucible, and a crucible shaft and a temperature measuring device are arranged at the bottom of the graphite crucible. The temperature measuring device penetrates through the center of the crucible shaft and is inserted into the bottom of the graphite crucible, and a signal data line connectedwith the data processor is led out of the bottom of the temperature measuring device. The temperature measuring device is arranged at the bottom of the graphite crucible and used for measuring the temperature of the bottom of the quartz crucible, the temperature change of the bottom of the quartz crucible in the crystal pulling process is obtained in real time, and therefore the power of the heater is adjusted.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon production, in particular to a Czochralski method single crystal furnace and a method for controlling the temperature gradient of the melt. Background technique [0002] In recent years, the growth technology of silicon single crystal has developed rapidly, and the lower cost and higher quality single crystal silicon has promoted the era of affordable power generation of crystalline silicon cells. [0003] The conversion efficiency of monocrystalline silicon cells is closely related to the minority carrier lifetime of monocrystalline silicon. It not only requires the minority carrier lifetime of native monocrystalline silicon to be high, but also ensures that the minority carrier life of single crystal silicon is high during the battery manufacturing process, especially during the thermal process of battery manufacturing. Life expectancy will not be greatly reduced. Oxygen is intro...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B15/20C30B29/06
CPCC30B15/00C30B15/203C30B29/06
Inventor 刘博旸
Owner 刘博旸
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