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A method for improving in-plane uniformity of a critical dimension of a device

A key size, uniform technology, applied in the photoengraving process of pattern surface, semiconductor/solid-state device testing/measurement, instrument, etc., can solve the problem of long correction period and so on

Active Publication Date: 2021-01-05
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the current correction method, if a product publishes a new mask, it must wait for the mask to enter the factory before conducting a test run and collecting data for confirmation. The correction cycle is relatively long. path program

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  • A method for improving in-plane uniformity of a critical dimension of a device

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Embodiment Construction

[0013] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0014] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. It should be understood that although the terms first, second, third etc. may be used to describe various elements, components, regions, layers, steps and / or sections, these elements, co...

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Abstract

The invention relates to a method for improving in-plane uniformity of a critical dimension of a device, and relates to a manufacturing technology of a semiconductor integrated circuit. The method includes obtaining pre-compensation data of the exposure program of the photoetching machine corresponding to the second photomask in advance according to the difference between the exposure program compensation data of the photoetching machine corresponding to the used first photomask and the pattern size of the corresponding position between the first photomask and the second photomask; performingcorresponding exposure program compensation when the second photomask starts to be applied to a photoetching process, therefore, the condition that the compensation is carried out after the technological processes such as trial run, measurement of final critical dimensions after dry etching and the like are performed after the photomask enters a factory can be avoided, so that the exposure programcompensation neutral period is avoided, and the probability that the wafer is scrapped in the neutral period is avoided, and the product yield is improved.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor integrated circuits, in particular to a method for improving the in-plane uniformity of key dimensions of devices. Background technique [0002] In the manufacturing process of a semiconductor chip, it is usually necessary to carry out multiple photolithography to form various microscopic patterns with precise dimensions on the semiconductor substrate. Among them, a photomask (Photo Mask), also called a photomask, is a pattern transfer tool or template used in a photolithography process. In the photolithography process, the photomask is placed between the exposure light source and the projection objective lens, the light with a certain wavelength emitted by the exposure light source passes through the photomask, and the pattern of the photomask is imaged on the wafer through the projection objective lens. The photoresist is coated on the wafer, and the characteristics of the part o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/66
CPCG03F7/70625H01L22/12H01L22/20
Inventor 黄正李斌
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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