Integrated bonding device and method for manufacturing atomic gas chamber for alkali metal direct filling

Abstract

The invention discloses an atomic gas chamber manufacturing integrated bonding device and method for alkali metal direct filling. The device comprises a vacuum conveying mechanism; a protection mechanism used for realizing an alkali metal direct charging atmosphere; an object moving mechanism used for realizing conveying and alkali metal direct filling operation; and an anodic bonding mechanism used for realizing anodic bonding of the silicon wafer and the high borosilicate glass. The protection mechanism comprises a base and a sealing cover; the sealing cover covers the base in a sealing manner to form a closed space; the object moving mechanism and the anodic bonding mechanism are accommodated in the closed space; the vacuum conveying mechanism is communicated with the closed space; and the object moving mechanism is used for conveying the silicon wafer and the high borosilicate glass to the anodic bonding mechanism. According to the invention, the manufacturing atmosphere of alkali metal direct filling for manufacturing the atomic air chamber is realized, and meanwhile, a clean and dry conveying atmosphere is also provided by the vacuum conveying mechanism; the integrated production of anodic bonding, packaging and alkali metal filling of the atomic gas chamber is realized, the automation degree is high, and the production efficiency and the yield are good.

Description

technical field [0001] The invention belongs to the technical field of atomic gas chamber manufacturing for micro-electromechanical systems and quantum sensors, and more specifically relates to an integrated bonding device and method for making an atomic gas chamber for direct charging of alkali metals. Background technique [0002] The micro-electro-mechanical system (Micro-Electro-Mechanical System, MEMS) atomic gas chamber is the "heart" of chip-level atomic devices. An indispensable key technology in the development of atomic clocks and miniaturized magnetometers. The design and manufacture of the MEMS atomic gas chamber includes two key steps: the fabrication of the atomic gas chamber cavity and the filling of alkali metal atoms and buffer gas. [0003] The manufacture of the atomic gas chamber cavity is realized by anodic bonding technology. The anodic bonding technology was proposed by Wallis and Pomerantz in 1969. It can electrostatically bond high borosilicate gla...

AI Technical Summary

Problems solved by technology

[0004] In the anodic bonding process of the atomic gas chamber cavity, the direct filling of alkali metal is very important. The traditional method of filling reactants to generate alkali metal, such as the existing commercial anodic bonding machine such as EVG510 bonding machine, works in a clean environment. In the open environment between them, alkali metal elements cannot be directly filled, and it can only be produced by reacting to form alkali metal elements.

In the production of MEMS atomic gas chamber, the by-products generated by chemical reactions are often attached to the glass layer or the inner wall of the atomic gas chamber, which will lead to a decrease in the light transmittance of the atomic gas chamber and affect the interaction between the alkali metal atoms and the modulated laser.

Furthermore, due to process reasons, the alkali metal atom content of each MEMS atomic gas chamber is significantly different, which seriously affects the yield of the atomic gas chamber

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