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Waveguide integrated photoelectric detector based on evanescent wave coupling mode

A photodetector and waveguide integration technology, applied in the field of integrated optoelectronics, can solve the problem of low photoelectric conversion ability and so on

Pending Publication Date: 2021-01-08
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a waveguide integrated photodetector based on the evanescent wave coupling method, which solves the problem of low photoelectric conversion capability of the conventional waveguide integrated photodetector based on the evanescent wave coupling method

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  • Waveguide integrated photoelectric detector based on evanescent wave coupling mode
  • Waveguide integrated photoelectric detector based on evanescent wave coupling mode
  • Waveguide integrated photoelectric detector based on evanescent wave coupling mode

Examples

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Embodiment 1

[0043] Take the ridge-type silicon waveguide and germanium light-absorbing layer as examples, such as Figure 2-3 As shown, the implementation process of the embodiment of the present invention is described in detail:

[0044] Waveguide integrated photodetectors based on evanescent wave coupling include:

[0045] Waveguide 1, light absorbing layer 2, cathode 3, anode 4 and cladding layer 5;

[0046] The wrapping layer 5 is made of silicon dioxide and wraps the waveguide 1 , the light absorbing layer 2 , the cathode 3 and the anode 4 , and the upper ends of the cathode 3 and the anode 4 are located outside the wrapping layer 5 .

[0047] The waveguide 1 is a ridge silicon waveguide. It is used to transmit optical signals. The thickest part (that is, the position of the central ridge) is 220nm or 250nm, the mainstream process index of the tape-out unit, and the width of the ridge does not exceed 1um; it has a strong ability to restrain the optical field and relatively small lo...

Embodiment 2

[0061] Such as Figure 6-7 As shown, the present invention provides another waveguide integrated photodetector based on evanescent wave coupling.

[0062] Compared with Embodiment 1, the difference is that in this embodiment: the number of the anode 4 and the high-concentration P++ doped region is one, and the high-concentration P++ doped region is located in the third doped region 103 of the waveguide 1; 4 connections;

[0063] The high-concentration N++ doped region is located in the second doped region 102 of the waveguide 1 ; and is connected to the cathode 3 .

[0064] It is understandable that for explanations, examples, beneficial effects, etc. of the relevant content of the embodiment of the present invention, reference may be made to the corresponding content in Embodiment 1, and details are not repeated here.

[0065] In summary, compared with the prior art, the present invention has the following beneficial effects:

[0066] When working, load the reverse bias vo...

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Abstract

The invention provides a waveguide integrated photoelectric detector based on an evanescent wave coupling mode, and relates to the technical field of integrated photoelectrons. During working, reversebias voltage is loaded to the cathode and the anode, the ridge part of the ridge waveguide is of a semi-surrounded distribution structure through the light absorption layer, the light absorption layer can efficiently absorb light signals transmitted by contact surfaces of the top and the two sides of the silicon ridge waveguide, and under the condition that the sizes of the light absorption layers are the same, in the embodiment of the invention, the light absorption efficiency of the light absorption layer can reach 87.1% (normalized data), and the light absorption efficiency, the photo-generated current and the responsivity of the light absorption layer are improved, so that the photoelectric conversion capability is improved. Compared with a conventional waveguide integrated photoelectric detector based on an evanescent wave coupling mode, the waveguide integrated photoelectric detector has the advantages that the width and the thickness of the waveguide meet the same process requirements, and the width and the thickness of the light absorption layer are the same. The requirement on the growth process precision of the light absorption layer is not increased in magnitude.

Description

technical field [0001] The invention relates to the technical field of integrated optoelectronics, in particular to a waveguide integrated photodetector based on evanescent wave coupling. Background technique [0002] Photodetectors use the internal photoelectric effect for photoelectric detection. At present, waveguide-integrated photodetectors based on evanescent wave coupling mainly adopt waveguide coupling, which can be divided into two types: docking coupling and evanescent wave coupling. Evanescent wave coupling is to place the waveguide on the top or below the detector, so that the incident light transmitted through the waveguide is coupled into the detector in the form of evanescent wave. [0003] The cross-section doping of conventional waveguide integrated photodetectors based on evanescent wave coupling is as follows: figure 1 As shown, it includes a waveguide, a light absorbing layer, a cathode, an anode and a cladding layer, a low-concentration P+ doped region...

Claims

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Application Information

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IPC IPC(8): H01L31/0232H01L31/0352H01L31/101
CPCH01L31/02327H01L31/035272H01L31/101
Inventor 朱宇鹏徐珍珠高旭东崇毓华梅理曹继明
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST