Crystal production process
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- XUZHOU XINJING SEMICON TECH CO LTD
- Publication Date
- 2021-01-12
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Abstract
Description
technical field
[0001] The invention relates to the technical field of crystal processing, in particular to a crystal production process. Background technique
[0002] In the related art, a double-layer crucible or a quartz ring is usually used to separate the molten material area from the crystal growth area in the production of single crystal silicon by CCZ (continuous extraction method). However, in the process of crystal production, there are still problems such as insufficient uniformity of melting soup in the molten material area and crystal growth area, poor crystal quality, and easy splashing of the cutting material, which makes it difficult for crystals to grow. Contents of the invention
[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. For this reason, the present invention proposes a crystal production process, which can make the melting soup in the crucible assembly more uniform, and is conducive to ...