A kind of algan thin film with in-situ sin dislocation annihilation layer and its epitaxial growth method

Abstract

The invention discloses an AlGaN film with an in-situ SiN dislocation annihilation layer and an epitaxial growth method thereof. The steps of the method include: epitaxially growing an AlN film on a sapphire substrate; epitaxially growing a first AlGaN thin film layer; using hydrogen gas to etch dislocation pits on the first AlGaN thin film layer; in-situ depositing a SiN dislocation annihilation layer on the surface of the dislocation pit; epitaxially growing a second dislocation annihilation layer on the SiN dislocation annihilation layer AlGaN thin film layer. In the present invention, by corroding dislocation pits on the first AlGaN thin film layer and then performing SiN in-situ filling, on the one hand, the second AlGaN thin film layer and subsequent film layers can be patterned synchronously during the growth process, It avoids the problem of taking out the epitaxial wafer for complex etching process and introducing impurities during taking out the etching; on the other hand, since the SiN dislocation annihilation layer is an island-like distribution structure corresponding to the dislocation pit, this structure is more conducive to Growth healing of the second AlGaN film layer.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to an AlGaN film with an in-situ SiN dislocation annihilation layer and an epitaxial growth method thereof. Background technique [0002] At present, AlGaN, as one of the important representatives of the third-generation new wide-bandgap semiconductor materials, has the characteristics of wide direct bandgap, high breakdown voltage, large electron saturation velocity, high temperature resistance, and radiation resistance, so AlGaN materials and low The three-dimensional quantum structure has incomparable advantages over traditional semiconductor materials in the production of ultraviolet detectors, ultraviolet LEDs, ultraviolet-infrared two-color detector devices and high-frequency microwave power devices, and has important applications in the fields of optoelectronics industry, biomedical industry, and national defense industry. The prospect is the key basic material to...

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Problems solved by technology

[0005] The object of the present invention is to provide an AlGaN thin film with an in-situ SiN dislocation annihilation layer and its epitaxial growth method, which is used to solve the problem of complex etching process and easy introduction of impurities in AlGaN materials in the prior art when patterning The problem

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