Phase change switch based on gallium-indium-tin liquid metal

A liquid metal, gallium indium tin technology, applied in the direction of electric switches, electrical components, circuits, etc., can solve problems such as the inability to achieve effective control of large currents, and achieve good conductivity, fast response, and miniaturization.

Pending Publication Date: 2021-01-29
XIAN MEDICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, limited by the silicon material, the allowable conduction current of the photoelectric switch is usually hundreds of milliamps, which cannot effectively control high voltage and large current (several amps or tens of amps).

Method used

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  • Phase change switch based on gallium-indium-tin liquid metal
  • Phase change switch based on gallium-indium-tin liquid metal
  • Phase change switch based on gallium-indium-tin liquid metal

Examples

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Embodiment Construction

[0027] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0028] The present invention is a phase change switch based on gallium indium tin liquid metal, such as figure 1 and figure 2 As shown, it includes a control layer 100, a gallium indium tin alloy 200, and an encapsulation layer 300. The encapsulation layer 300 has a semi-open cavity structure. The encapsulation layer 300 and the control layer 100 form a closed cavity, and the gallium indium tin alloy 200 is encapsulated in a vacuum. in a closed cavity.

[0029] Such as image 3 As shown, the control layer 100 includes a switch region 102 connected to the encapsulation layer 300, and also includes an insulating layer 103. The insulating layer 103 is connected to the bottom of the switch region 102 by chemical deposition. The bottom of the insulating layer 103 is connected to the cold and hot regions 101, and the switch region The end of 10...

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Abstract

The invention relates to a phase change switch based on the gallium-indium-tin liquid metal. The switch comprises a control layer, gallium-indium-tin alloy and a packaging layer, the packaging layer is of a semi-open cavity structure, a closed cavity is formed by the packaging layer and the control layer, and the gallium-indium-tin alloy is packaged in the closed cavity in a vacuum mode; at normaltemperature, the gallium-indium-tin alloy is in a liquid state, at the moment, the gallium-indium-tin alloy has good conductivity, high-voltage resistance and high-current resistance, and the switchis in a conducting state; at a high temperature, the gallium-indium-tin alloy is in a gaseous state, at the moment, the gallium-indium-tin alloy has good electrical insulation, and the switch is in anoff state; the environment temperature is controlled through a heating disc, so that phase change of gallium-indium-tin metal is achieved, and finally control over the on-off state is achieved. The whole device is manufactured through an integrated circuit process, and miniaturization of the device is effectively achieved. The phase change switch also has the characteristics of miniaturization, integration, quick response, high voltage resistance and high current resistance.

Description

technical field [0001] The invention belongs to the technical field of microelectronic switches, and in particular relates to a phase change switch based on gallium indium tin liquid metal. Background technique [0002] A switch generally refers to an electronic component that can open a circuit, interrupt current, or allow it to flow to other circuits. The most common switches mainly include mechanical switches, photoelectric switches, and electromagnetic switches (electromagnetic relays). With the wide application of micro-nano technology, the switches of microelectronic circuits are developing toward the direction of integration, miniaturization and high speed. [0003] Existing mechanical switches and electromagnetic switches usually use the close contact between metal contacts to realize the conduction of the circuit. This method makes the switch have the characteristics of high voltage and high current resistance, but the device responds quickly and No breakthrough c...

Claims

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Application Information

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IPC IPC(8): H01H29/06H01H29/02
CPCH01H29/06H01H29/02
Inventor 李美
Owner XIAN MEDICAL UNIV
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