Inverted GaN power device packaging structure and preparation method thereof

Abstract

The invention discloses an inverted GaN power device packaging structure, which comprises a ceramic substrate, an open groove is formed in the surface of the ceramic substrate in a sinking mode, a groove body of the open groove is in an inverted concave shape, and the bottom of the groove body of the open groove and the back of the ceramic substrate are covered with copper layers. The middle of the upper portion of the inverted concave shaped groove body is coated with insulating paint, V-shaped grooves are formed between the two sides of the long edges of the insulating paint layer and the front copper layer, soldering paste is applied to the lower portion and the front copper layer on one side of the long edge of the inverted concave shaped groove body, and a chip is attached to one sideof the front copper layer, far from the insulating paint, on the outer side of each V-shaped groove through soldering paste. The lower portion of the inverted concave shaped groove body is welded toa lead frame foot stand welding area through soldering paste, it is guaranteed that a chip is safely welded in an inverted-buckling state, the lead frame is positioned, and it is guaranteed that the frame does not slip in the welding process.

Description

technical field [0001] The invention relates to the field of manufacturing, in particular to a packaging structure of a flip-chip GaN power device and a preparation method thereof. Background technique [0002] The existing common chip mounting process uses solder paste as an adhesive to mount the backside of the chip on the chip loading area of ​​the lead frame. At the same time, in order to achieve the effect of forming an electrical connection between the chip and the pins of the device, wire bonding or copper bridging is often used between the active area on the front of the chip and the pins. This process method has been widely used and recognized by the industry, and has reliable operability. However, the bonding wire (or copper bridge) will generate stray inductance in the entire electrical circuit, and high-frequency devices are particularly sensitive to stray inductance. As the stray inductance increases, the turn-on loss increases. Stray inductance can also cause...

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem of reducing the stray inductance caused by bonding wires, the present invention discloses a package structure of a flip-chip GaN power device and a preparation method thereof

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