Preparation method of light emitting diode epitaxial wafer

A technology for light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency, low activation rate, and low hole concentration of light-emitting diodes

Active Publication Date: 2021-02-05
HC SEMITEK SUZHOU
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  • Claims
  • Application Information

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Problems solved by technology

However, the activation rate of Mg in the p-type layer is not high enough, and the hole concentration in the p-type layer is low, resulting in low luminous efficiency of the final light-emitting diode.

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  • Preparation method of light emitting diode epitaxial wafer
  • Preparation method of light emitting diode epitaxial wafer
  • Preparation method of light emitting diode epitaxial wafer

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[0029] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0030] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those having ordinary skill in the art to which the present disclosure belongs. "First", "second", "third" and similar words used in the specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components . Likewise, words like "a" or "one" do not denote a limitation in quantity, but indicate that there is at least one. Words such as "comprises" or "comprising" and similar terms mean that the elements or items listed before "comprising" or "comprising" include the elements or items listed after "comprising" or "comprising" a...

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Abstract

The invention provides a preparation method of a light-emitting diode epitaxial wafer, and belongs to the field of light-emitting diode manufacturing. First annealing is carried out in the oxygen atmosphere, a Mg-H complex can react with oxygen to break a Mg-H bond, H in the Mg-H complex can react with oxygen to generate H2O to be discharged, and other impurity elements, except nitride materials and Mg atoms, remaining in the p-type layer can also be reduced. Secondary annealing is carried out in a nitrogen environment after temperature rise, the crystalline quality of the p-type layer is further improved while the Mg-H complex in the p-type layer is reduced, Mg atoms can freely move in the p-type layer and mainly serve as acceptor impurities, the hole concentration in the p-type layer iseffectively increased, holes in the p-type layer can be promoted to quickly flow, the number of holes finally entering the light-emitting layer is increased, the number of non-radiative holes in the light-emitting diode epitaxial wafer is also partially reduced, and the light-emitting efficiency of the finally obtained light-emitting diode is also improved.

Description

technical field [0001] The disclosure relates to the field of light-emitting diode fabrication, in particular to a method for preparing a light-emitting diode epitaxial wafer. Background technique [0002] A light emitting diode is a semiconductor electronic component that emits light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The light-emitting diode epitaxial wafer is the basic structure used to prepare light-emitting diodes. The light-emitting diode epitaxial wafer includes at least a substrate and an n-type layer, a light-emitting layer, and a p-type layer stacked on the substrate in sequence. The p-type layer often uses Mg-doped Nitride preparation. However, the activation rate of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0095H01L33/007H01L33/325
Inventor 刘旺平梅劲刘春杨张武斌葛永晖
Owner HC SEMITEK SUZHOU
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