Preparation method of metal oxide ceramic with three-dimensional nanostructure
An oxide ceramic and three-dimensional nanotechnology, which is applied in the direction of additive processing, etc., can solve the problems that three-dimensional nanostructured metal oxide ceramics are difficult to obtain by direct processing, difficult to control and control metal oxide ceramics, etc., and achieves high repeatability and preparation method. Simple and effective control
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Embodiment 1
[0037] This embodiment provides a method for preparing a metal oxide ceramic with a three-dimensional nanostructure, and the specific steps are as follows:
[0038] (1) Use detergent, deionized water and absolute ethanol to ultrasonically clean the silicon wafer for 15 minutes, dry it with dry compressed air, and treat the cleaned silicon wafer with ultraviolet-ozone for 10 minutes to remove the organic residue on the surface of the silicon wafer ;
[0039] (2) SnCl 4 ·5H 2 O and PEGDA (the average molecular weight is about 700) were mixed in a mass ratio of 5:3; 4:4; 3:5; 2:6, and 1 wt% (as SnCl 4 ·5H 2 O and the total mass of PEGDA as a benchmark) photoinitiator 2,2-dimethoxy-phenylacetophenone, magnetically stirred for 4 hours at 60 ° C until the photoresist was clear and transparent, and the doped tin chloride was obtained photoresist;
[0040] (3) Paste two layers of polyimide tape (about 75 μm per layer) around the silicon wafer that has been cleaned in step (1), an...
Embodiment 2
[0047] This embodiment provides a method for preparing a metal oxide ceramic with a three-dimensional nanostructure, and the specific steps are as follows:
[0048] (1) ultrasonically clean the silicon wafer with detergent, deionized water and absolute ethanol for 15 minutes, dry it with dry compressed air, and treat the cleaned silicon wafer with ultraviolet-ozone for 10 minutes to remove the organic residue on the surface;
[0049] (2) SnCl 4 ·5H 2 O and PEGDA (the average molecular weight is about 700) were mixed in a mass ratio of 5:3; 4:4; 3:5; 2:6, and 1 wt% (as SnCl 4 ·5H 2 O and the total mass of PEGDA as a benchmark) photoinitiator 2,2-dimethoxy-phenylacetophenone, magnetically stirred for 4 hours at 60 ° C until the photoresist was clear and transparent, and the doped tin chloride was obtained photoresist;
[0050] (3) Paste two layers of polyimide tape (each layer is about 75 μm) around the silicon wafer cleaned in step (1), and drop a drop of step (2) configura...
Embodiment 3
[0057] This embodiment provides a method for preparing a metal oxide ceramic with a three-dimensional nanostructure, and the specific steps are as follows:
[0058] (1) ultrasonically clean the silicon wafer with detergent, deionized water and absolute ethanol for 15 minutes, dry it with dry compressed air, and treat the cleaned silicon wafer with ultraviolet-ozone for 10 minutes to remove the organic residue on the surface;
[0059] (2) SnCl 4 ·5H 2 O and PEGDA (average molecular weight about 700) are mixed in a mass of 4:4 (that is, 1:1), and then 1 wt% (as SnCl 4 ·5H 2 O and the total mass of PEGDA as a benchmark) photoinitiator 2,2-dimethoxy-phenylacetophenone, magnetically stirred for 4 hours at 60 ° C until the photoresist was clear and transparent, and the doped tin chloride was obtained photoresist;
[0060] (3) Paste two layers of polyimide tape (each layer is about 75 μm) around the silicon wafer cleaned in step (1), and drop a drop of step (2) configuration on t...
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