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Nonvolatile optical switch and manufacturing method thereof

A non-volatile, manufacturing method technology, used in nonlinear optics, optics, instruments, etc., can solve the problems of large size and large insertion loss of silicon-based optical switches, and achieve large extinction ratio, low insertion loss, and reduced insertion loss. The effect of loss

Inactive Publication Date: 2021-02-26
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the prior art described above, the purpose of the present invention is to provide a non-volatile optical switch and its manufacturing method, which are used to solve the problems of large size and large insertion loss of silicon-based optical switches in the prior art.

Method used

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  • Nonvolatile optical switch and manufacturing method thereof

Examples

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Embodiment 1

[0063] see Figure 3a-3f , the method for fabricating the nonvolatile optical switch structure provided by Embodiment 1 includes the following steps:

[0064] First, if Figure 3a As shown, a base is provided, and the base includes a support substrate 101 , an insulating buried layer 100 and a semiconductor top layer 102 sequentially from bottom to top. Specifically, the substrate may be an SOI (Silicon on Insulator) substrate, that is, a silicon-on-insulator substrate, wherein the supporting substrate 101 may be a silicon substrate, the buried insulating layer 100 may be a silicon oxide layer, and the semiconductor top layer 102 may be is a monocrystalline silicon layer.

[0065] Then, if Figure 3b As shown, the semiconductor top layer 102 is patterned to form a single-mode waveguide 200 . The single-mode waveguide 200 formed at this time may be a silicon waveguide. Specifically, when forming the single-mode waveguide 200, the semiconductor top layer 102 may be patterne...

Embodiment 2

[0069] Embodiment 2 adopts substantially the same manufacturing method as Embodiment 1, and the difference lies in that the method steps for forming the phase change material microdisk 300 are different.

[0070] Embodiment 2 also uses the SOI substrate as the initial material of the process, and then patterns the semiconductor top layer 102 on the SOI substrate to form the single-mode waveguide 200 . After that, a photoresist is formed above the single-mode waveguide 200 and a rectangular pattern is formed in the photoresist by electron beam exposure, and the rectangular pattern exposes part of the surface of the single-mode waveguide; Grow Ge in the graph 2 Sb 2 Te 5 thin film; the photoresist is then stripped, as Figure 4a As shown, a rectangular pattern of Ge is grown on the single-mode waveguide 200 2 Sb 2 Te 5 Film 301; Figure 4b Shown is Ge forming a rectangular pattern 2 Sb 2 Te 5 A schematic top view of the structure after the thin film 301 . Next, the re...

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Abstract

The invention provides a nonvolatile optical switch and a manufacturing method thereof. The nonvolatile optical switch comprises an insulating buried layer; a single-mode waveguide which is positionedon the insulating buried layer; a phase-change material micro-disk which is positioned on the single-mode waveguide; and an upper cladding covering the phase change material microdisk and the single-mode waveguide. Compared with an existing silicon-based optical switch, the nonvolatile optical switch has the advantages of being smaller in device size, large in extinction ratio and low in insertion loss.

Description

technical field [0001] The invention relates to the fields of semiconductors and optoelectronic integration, in particular to a nonvolatile optical switch and a manufacturing method thereof. Background technique [0002] Photonic integrated circuits are one of the trends in the development of future communication systems, and they have the potential to overcome a series of limitations faced by today's electronic communication systems, such as von Neumann bottlenecks, high power consumption, and limited bandwidth. Traditional copper wire interconnection has limitations such as high loss, slow speed, and crosstalk, especially when the interconnection density increases. With its low cost and high yield, the silicon photonics platform has become the main development direction of inter-chip and intra-chip communication, because it can take advantage of the highly developed CMOS manufacturing process used in the microelectronics industry. [0003] The realization of silicon-based...

Claims

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Application Information

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IPC IPC(8): G02F1/00G02F1/01
CPCG02F1/0009G02F1/011
Inventor 李文霏曹溪源武爱民
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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