Method for substrate edge contour correction based on GCIB

An edge profile, substrate technology, applied in the direction of discharge tubes, electrical components, plasma, etc., can solve the problem that belts, pulleys and slow-scan servo motors are too large, unable to pull the shuttle, and stuck in certain positions of the shuttle And other issues

Inactive Publication Date: 2021-03-09
JIANGSU JICHUANG ATOMIC CLUSTER RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contamination or failure of the shuttle drive assembly will cause slow scanning motion along the guide rail of the shuttle drive assembly to get stuck in some positions of the shuttle, gravity cannot pull the shuttle in some cases, the scanning motor, and according to the requirements of the process recipe Extends the arm downwards, preventing proper handling of the workpiece
Worse, if at some point gravity does overcome the jammed shuttle, and enough of the belt has previously been unwound from the pulley, the entire shuttle, fast scan motor, and arm carrying the workpiece are suddenly free Dropping, causing excessive force on the belt, pulleys, and slow-scan servo motor, usually causes slow-scan servo motor failure

Method used

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  • Method for substrate edge contour correction based on GCIB
  • Method for substrate edge contour correction based on GCIB
  • Method for substrate edge contour correction based on GCIB

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Embodiment Construction

[0030] In the following description, in order to facilitate a general understanding of the invention, and for purposes of explanation and not limitation, specific details are set forth, such as specific geometries of photolithography, coater / developer, and void-fill processing systems , and descriptions of the various components and processes. However, it should be understood that the invention may be practiced in other embodiments that depart from these specific details.

[0031] In the following description, ion beam and gas cluster ion beam (GCIB) may be used interchangeably since the workpiece scanning mechanism can process workpieces with normal (ie monomer) ion beam and gas cluster ion beam (GCIB).

[0032] In the following description, workpiece, substrate, and wafer are used interchangeably to refer to a workpiece processed by an ion beam or gas cluster ion beam (GCIB). The workpiece may comprise conductive, semiconductive or dielectric substrates, with or without var...

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Abstract

The invention discloses a method for substrate edge profile correction based on a GCIB, which comprises the steps of providing a workpiece having surface properties exhibiting spatial variation between an edge region and an interior region; performing a first scan motion of the workpiece along a rotation path through the first GCIB, wherein the rotation path exposes a peripheral edge region of theworkpiece to the first GCIB, and reducing a spatial change in surface properties between the peripheral edge region and an internal region; and performing a second scanning motion on the workpiece along a non-circular path exposing the peripheral edge region and the internal region of the workpiece to the second GCIB through the second GCIB, wherein the surface properties include the film thickness, the surface profile, the surface roughness, the surface composition, the layer composition, the mechanical property of the workpiece, the electrical property of the workpiece, or the optical property of the workpiece, or two or more of any combination.

Description

technical field [0001] The present invention relates to systems and methods for irradiating substrates with a gas cluster ion beam (GCIB), and more particularly to an improved apparatus, system and method for edge profile correction of substrates scanned by GCIB. Background technique [0002] Gas Cluster Ion Beams (GCIB) are used for doping, etching, cleaning, smoothing, and growing or depositing layers on substrates. For ease of discussion, gas clusters are nanoscale material aggregates that are gaseous under standard temperature and pressure conditions. Such gas clusters may consist of aggregates comprising a few to thousands of molecules or more loosely bound together. Gas clusters can be ionized by electron bombardment, which allows forming gas clusters into directed beams of controllable energy. These cluster ions generally each carry a positive charge given by the product of the magnitude of the charge and an integer representing the charge state of the cluster ion o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H05H1/34H01L21/67
CPCH01J37/32449H01L21/67069H05H1/34
Inventor 曹路刘翊张同庆
Owner JIANGSU JICHUANG ATOMIC CLUSTER RES INST CO LTD
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