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Charge pump circuit arrangement

A circuit device, charge pump technology, applied in circuits, output power conversion devices, electrical components, etc., can solve problems such as charge pump efficiency limitations

Pending Publication Date: 2021-03-09
AMS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The efficiency of the charge pump operation is limited due to the considerable parasitic capacitance between the high voltage p-well and the deep n-well

Method used

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  • Charge pump circuit arrangement
  • Charge pump circuit arrangement
  • Charge pump circuit arrangement

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Embodiment Construction

[0021] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings that illustrate embodiments of the disclosure. However, this disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. These embodiments are provided so that this disclosure will fully convey the scope of the disclosure to those skilled in the art. The drawings are not necessarily drawn to scale but are configured to clearly illustrate the present disclosure.

[0022] figure 1 A conventional charge pump circuit according to the so-called Dickson structure is shown. The charge pump generates a boosted output voltage VOUT available at a tank capacitor 102 from an input voltage VDD supplied by an input voltage source 101 , which is supplied to loads 103 , 104 . According to the Dickson structure, the charge pump consists of a sequence of N capacitors, in figure 1 Capacitors 110, 111, 112, 11...

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Abstract

A charge pump circuit arrangement comprises a multitude of capacitors (110, 111, 112, 113) of a first and a second group controlled by non-overlapping clock pulses (CLK1, CLK2). The capacitors are partly realized in a semiconductor substrate including a deep well doping region and a high voltage doping region surrounded by the deep well doping region. Switches (324, 325) are connected to a pair ofcapacitors to control the deep well doping regions with signals (CTRL1, CTRL2) in phase with the corresponding clock signal (CLK1, CLK2).

Description

technical field [0001] The present disclosure relates to a circuit arrangement for a charge pump. In particular, the present disclosure relates to a charge pump circuit arrangement in which a part of a plurality of capacitors forming the charge pump is realized in a substrate comprising a deep well doped region of a first conductivity type and a deep well disposed in the deep well Another doped well of the second conductivity type above the region. Background technique [0002] Charge pumps are widely used in integrated CMOS semiconductor circuits to generate output voltages higher than the input supply voltage. In a Dickson-type charge pump, a string of capacitors interconnected by switches is controlled by phase-shifted, non-overlapping clock signals. The capacitor may be implemented as a MOS capacitor (MOSCAP), where a part of the capacitor is provided in a semiconductor substrate and the other part of the capacitor is formed by a gate electrode. Using complementary MO...

Claims

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Application Information

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IPC IPC(8): H02M3/07H01L27/02G05F3/20G11C5/14H01L21/8238H01L27/092H01L29/92H01L29/94
CPCH02M3/07G11C5/145H01L29/92H01L29/94H01L21/823493H01L27/088H02M3/075H01L27/092
Inventor 内纳德·利利奇罗伯特·卡佩尔格奥尔格·勒雷尔
Owner AMS AG