Grain boundary enhanced nitride bonded silicon carbide kiln furniture
A silicon carbide kiln and nitride technology, which is applied in the field of grain boundary enhanced nitride combined with silicon carbide kiln furniture, can solve the problems of high firing temperature, complicated process and expensive raw materials, and achieves good oxidation resistance and thermal conductivity. High and stable mechanical properties
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Embodiment 1
[0026] The composition of a grain boundary enhanced nitride bonded silicon carbide kiln furniture: the proportion of silicon carbide is 70%, the proportion of nitride is 20%, and the proportion of oxide film is 10%; hydrogenated amorphous silicon with a critical particle size of 90nm is nitridated to generate nitrogen The proportion of compound is 10%, the nitriding temperature is 1550°C, the pre-oxidation temperature is 1550°C, the apparent porosity of the product is 6.0%, and the bulk density is 2.79g / cm 3 , Normal temperature strength 60.0Mpa, 1400℃ high temperature strength 70.0Mpa, 1550℃×50h (saturated water vapor oxidation) △m% is 0.8%, △V% is 0.5%.
Embodiment 2
[0028] The composition of a grain boundary enhanced nitride bonded silicon carbide kiln furniture is: the proportion of silicon carbide is 87%, the proportion of nitride is 10%, and the proportion of oxide film is 3%. The proportion of nitrides formed by the nitridation reaction of hydrogenated amorphous silicon with a critical particle size of 80nm is 1%. The nitriding temperature is 1400°C, the pre-oxidation temperature is 1400°C; the apparent porosity of the product is 12.8%, and the bulk density is 2.68g / cm 3 , Normal temperature strength 50.0Mpa, 1000℃ high temperature strength 55.0Mpa, 1550℃×50h (saturated water vapor oxidation) △m% is 1.8%, △V% is 2.0%.
Embodiment 3
[0030] The composition of a grain boundary enhanced nitride bonded silicon carbide kiln furniture is: the proportion of silicon carbide is 78%, the proportion of nitride is 15%, and the proportion of oxide film is 7%. The proportion of nitrides formed by the nitridation reaction of hydrogenated amorphous silicon with a critical particle size of 50nm is 5%. The nitriding temperature is 1450°C, and the pre-oxidation temperature is 1500°C. The apparent porosity of the product is 9.0%, and the bulk density is 2.74g / cm 3 , Normal temperature strength 50.0Mpa, 1000℃ high temperature strength 55.0Mpa, 1550℃×50h (saturated water vapor oxidation) △m% is 1.3%, △V% is 1.5%.
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