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Multi-chip packaging structure and method for passive device stacking

A multi-chip packaging, passive device technology, applied in the direction of electric solid device, semiconductor device, semiconductor/solid state device manufacturing, etc., can solve the problem of limited electrical parameter range of components, etc. Highly integrated effects

Pending Publication Date: 2021-03-19
CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are some passive device integration technologies in the industry, such as embedding passive devices into prefabricated organic substrates, but due to the limitation of substrate processing technology, the range of electrical parameters of components is limited

Method used

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  • Multi-chip packaging structure and method for passive device stacking
  • Multi-chip packaging structure and method for passive device stacking
  • Multi-chip packaging structure and method for passive device stacking

Examples

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Embodiment Construction

[0043] Through the following examples, combined with the attached Figure 1-16 , the technical solution of the present invention will be further specifically described.

[0044] as attached figure 1 As shown, the present invention provides a stacked multi-chip package structure of passive devices, the package structure includes: metal layer 1, adhesive material 2, bare chip 3, conductive metal block 4, metal via hole 5, rewiring layer 6 , external pins 8, passive devices 9, conductive adhesive material 10, epoxy molding compound 11; the packaging structure uses epoxy molding compound 11 as the interlayer dielectric material, and a chip or Multiple integrated circuit bare chips3.

[0045] Among them, the metal layer 1 is made on the surface of the temporary support plate 0 through processes such as photolithography / electroplating / development and film removal; the bare chip 3 is bonded to the metal layer 1 through the adhesive material 2; the conductive metal block 4 is arrang...

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PUM

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Abstract

The invention provides a multi-chip packaging structure and method for passive device stacking. The structure comprises a metal layer, a bonding material, bare chips, conductive metal blocks, metal via holes, a rewiring layer, outer pins, passive devices, a conductive bonding material and an epoxy molding compound; the metal layer is used for connecting the passive devices; the bare chip is bondedwith the metal layer through the bonding material; the conductive metal block is arranged on the surface of the active region of the bare chip; the rewiring layers are connected with the conductive metal blocks; the rewiring layers are connected with adjacent rewiring layers, metal layer or packaging outer pin through the metal via holes or the conductive metal blocks; the passive devices are encapsulated in the epoxy molding compound; and the conductive bonding material is used for realizing electrical signal connection between the passive devices and the rewiring layer or the metal layer. According to the invention, the rewiring layer and the metal via holes are manufactured layer by layer, three-dimensional wiring is carried out in the epoxy molding compound, and a plurality of bare chips are embedded, so that the design of higher integration level and smaller boundary dimension in a single package is realized.

Description

technical field [0001] The invention relates to the technical field of chip design, in particular to a multi-chip packaging structure and method for stacking passive devices. Background technique [0002] As the critical dimensions of semiconductor integrated circuits continue to shrink, getting closer and closer to the technical limit of silicon materials, whether Moore's Law can continue has been greatly challenged. Heterogeneous integration through packaging technology is one of the ways to continue Moore's Law. At the same time, the miniaturization of electronic products and the increasingly tight product development cycle have put forward demands for the miniaturization and ease of use of integrated circuits. [0003] For example, in the traditional power management circuit, in addition to the DC-to-DC buck-boost chip (DC-DC) and the low-dropout linear regulator (LDO), peripheral devices are also required, such as: input and output capacitors, inductors, voltage regula...

Claims

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Application Information

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IPC IPC(8): H01L23/538H01L23/31H01L25/16H01L21/56H01L21/683H01L21/768
CPCH01L25/16H01L23/5386H01L23/3114H01L21/76895H01L21/56H01L21/6835H01L2221/68359
Inventor 管松敏华明吴小婧
Owner CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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