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Large-chamfer-angle heterogeneous substrate-gallium nitride composite structure and growth method thereof

A technology of heterogeneous substrate and composite structure, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that gallium nitride materials cannot form a flat surface, narrow steps, etc., to overcome difficulties in flatness and quality The effect of good, easy growing conditions

Pending Publication Date: 2021-03-26
江苏第三代半导体研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] If the sapphire substrate with a small off-cut angle is replaced by a sapphire substrate with a large off-cut angle and epitaxial growth of GaN material (such as figure 2 As shown), due to the narrow and deep steps of the sapphire substrate with a large off-cut angle, a small platform will be formed when the three-dimensional GaN is grown. The long distance between them and the lack of merging lead to the fact that the final GaN material cannot form a flat surface.

Method used

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  • Large-chamfer-angle heterogeneous substrate-gallium nitride composite structure and growth method thereof
  • Large-chamfer-angle heterogeneous substrate-gallium nitride composite structure and growth method thereof
  • Large-chamfer-angle heterogeneous substrate-gallium nitride composite structure and growth method thereof

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Embodiment 1

[0056] A heterogeneous epitaxial growth method based on "buffer layer-two-dimensional-three-dimensional underlying structure" includes:

[0057] 1) Place a large bevel angle sapphire substrate with a bevel angle of 1° in an epitaxial growth chamber, adjust the growth temperature in the growth chamber to 500°C, and the growth pressure to 600torr, and place the sapphire substrate with a large bevel angle A 25nm low-temperature GaN buffer layer is deposited on the bottom;

[0058] 2) Raise the growth temperature in the growth chamber to 1020°C, keep the growth pressure at 400torr, and perform annealing treatment on the low-temperature GaN buffer layer. The annealing time is 4 minutes. At this time, the low-temperature GaN buffer layer gathers at the steps to form islands ;

[0059] 3) Increase the growth temperature in the growth chamber to 1040°C, reduce the growth pressure to 50torr, and grow a 150nm two-dimensional GaN layer on the sapphire substrate with a large off-cut angl...

Embodiment 2

[0063] see image 3 , a heteroepitaxial growth method based on "buffer layer-two-dimensional-three-dimensional underlying structure" includes:

[0064] 1) Place a large bevel angle sapphire substrate with a bevel angle of 1° in an epitaxial growth chamber, adjust the growth temperature in the growth chamber to 530°C, and the growth pressure at 500torr, and place the sapphire substrate with a large bevel angle A 25nm low-temperature GaN buffer layer is deposited on the bottom;

[0065] 2) Raise the growth temperature in the growth chamber to 1040°C, and perform annealing treatment on the low-temperature GaN buffer layer, wherein the annealing time is 5 minutes, at this time, the low-temperature GaN buffer layer gathers at the steps to form an island shape;

[0066] 3) Increase the growth temperature in the growth chamber to 1060°C, reduce the growth pressure to 100torr, and grow a 150nm two-dimensional GaN layer on a sapphire substrate with a large off-cut angle at a growth ra...

Embodiment 3

[0070] see image 3 , a heteroepitaxial growth method based on "buffer layer-two-dimensional-three-dimensional underlying structure" includes:

[0071] 1) Place a large bevel angle sapphire substrate with a bevel angle of 1° in an epitaxial growth chamber, adjust the growth temperature in the growth chamber to 600°C, and the growth pressure to 400torr, and place the sapphire substrate with a large bevel angle A 25nm low-temperature GaN buffer layer is deposited on the bottom;

[0072] 2) Raise the growth temperature in the growth chamber to 1080°C, keep the growth pressure at 500torr, and anneal the low-temperature GaN buffer layer. The annealing time is 5 minutes. At this time, the low-temperature GaN buffer layer gathers at the steps to form islands shape;

[0073] 3) Increase the growth temperature in the growth chamber to 1080°C, reduce the growth pressure to 200torr, and grow a 150nm two-dimensional GaN layer on the sapphire substrate with a large off-cut angle at a gro...

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Abstract

The invention discloses a large-chamfer-angle heterogeneous substrate-gallium nitride composite structure and a growth method thereof. The method comprises the following steps of growing and forming an island-shaped gallium nitride buffer layer in a step of a large-chamfer-angle heterogeneous substrate, growing and forming a two-dimensional gallium nitride layer on the large-chamfer-angle heterogeneous substrate, and enabling the two-dimensional gallium nitride layer to fill the steps on the large-chamfer-angle heterogeneous substrate, growing and forming a three-dimensional island-shaped gallium nitride layer on the two-dimensional gallium nitride layer, and combining the three-dimensional island-shaped gallium nitride layers and growing a gallium nitride material. According to the methodprovided by the invention, a heteroepitaxial growth method of a novel buffer layer-two-dimensional-three-dimensional bottom layer structure is adopted, and the technical problem that the growth morphology is difficult to flatten due to a large chamfer angle is solved, so that the advantages and characteristics of an epitaxial film of a large chamfer angle substrate can be exerted.

Description

technical field [0001] The invention particularly relates to a large off-cut heterogeneous substrate-gallium nitride composite structure and a growth method thereof, belonging to the field of semiconductor technology. Background technique [0002] The current epitaxial growth of gallium nitride materials is divided into homoepitaxial and heteroepitaxial. Homoepitaxy is grown on a gallium nitride substrate. The gallium nitride epitaxial film on it has high flatness, the surface generally presents a narrow step flow morphology, and the crystal quality is very good. Hetero-epitaxy is grown on a substrate such as sapphire, and the GaN epitaxial film on it is affected by the bevel angle of the substrate, etc., and the flatness and crystal quality are not as homogeneous as epitaxy. [0003] In order to improve the quality, heterogeneous substrates with very small bevel angles are used in the industry (the bevel angle of sapphire substrates is generally 0.2°), which is easy to obt...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02414H01L21/02458H01L21/02513H01L21/0254H01L21/0259H01L21/02617H01L21/02656
Inventor 王国斌王建峰毕文刚徐科
Owner 江苏第三代半导体研究院有限公司
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