Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MOS gate-controlled thyristor with parasitic diode and manufacturing method thereof

A technology of parasitic diodes and thyristors, applied in the field of MOS gate-controlled thyristors and its manufacturing, can solve problems such as device failure and pulse system failure, and achieve the effect of avoiding failure

Active Publication Date: 2021-03-26
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to avoid the failure of the pulse system caused by the breakdown of the gate dielectric when the MOS control thyristor is applied in the field of pulse power, and the failure of the device due to the breakdown of the gate dielectric during electrostatic discharge

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOS gate-controlled thyristor with parasitic diode and manufacturing method thereof
  • MOS gate-controlled thyristor with parasitic diode and manufacturing method thereof
  • MOS gate-controlled thyristor with parasitic diode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Below in conjunction with accompanying drawing and embodiment, describe technical solution of the present invention in detail:

[0038] figure 1 is a schematic structural diagram of an MCT, which has a parasitic thyristor structure, which has a large di / dt when it is turned on, and a small conduction voltage drop when it is turned on. However, when applied to pulse discharge, due to its large di / dt, a large induced electromotive force will be generated on the parasitic inductance from the cathode of the device to the ground, and the potential difference between the two ends of the gate capacitor will increase to exceed the gate oxide Layer breakdown voltage (V OX ) will result in breakdown of the gate oxide layer, thereby rendering the pulsed system ineffective.

[0039] figure 2 It is a schematic structural diagram of a MOS gate-controlled thyristor with a parasitic diode in an embodiment. Compared with the conventional MCT, the cathode metal 8 in the structure of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of power semiconductors, and particularly relates to an MOS gate-controlled thyristor with a parasitic diode and a manufacturing method thereof, wherein the MOS gate-controlled thyristor and the method are suitable for the field of pulse power. By improving the device structure of a conventional MOS gate-controlled thyristor and introducing a parasiticdiode between a gate and a cathode, the problems that when the MOS gate-controlled thyristor is applied to the field of pulse power, due to gate dielectric breakdown, a pulse system fails, and duringelectrostatic discharge, due to gate dielectric breakdown, a device fails are solved.

Description

technical field [0001] The invention relates to the technical field of power semiconductors, in particular to a MOS gate-controlled thyristor with a parasitic diode and a manufacturing method thereof suitable for the field of pulse power. Background technique [0002] In the pulse power system, the energy storage system and the power semiconductor switch are often used to compress the energy in the time width to generate transient high-power pulses. For the current pulse, it is generally required to have a larger rising edge di / dt and peak current. As the key device in the power pulse system, the power semiconductor switch determines the output power of the system, so it also puts forward corresponding requirements for its peak current and di / dt capability. [0003] Conventional MOS-Control Thyristors (MCTs) have the characteristics of high current density, fast switching speed, and small conduction voltage drop, which are very suitable for application in the field of power...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/749H01L29/74H01L21/332
CPCH01L29/7412H01L29/749H01L29/66371
Inventor 陈万军张舒逸刘超张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com