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Method for preparing silver plating additive on wafer

An additive and wafer technology, applied in the field of buffer tanks, can solve the problems of corrosion of equipment, physical injury of operators, decomposition into toxic gases, etc., and achieve the effects of stable reaction, avoidance of human injury, and high production efficiency

Pending Publication Date: 2021-04-02
SHANGHAI WELNEW MICRO ELECTRONICS
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  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a method for preparing a silver-plating additive on a wafer, which solves the problem that the existing common silver-plating technology corrodes the equipment and decomposes into poisonous gas during the production process, which is harmful to the operation. bodily harm

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  • Method for preparing silver plating additive on wafer
  • Method for preparing silver plating additive on wafer
  • Method for preparing silver plating additive on wafer

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preparation example Construction

[0018]A method of preparing a silver plated additive on a wafer, the preparation method comprising the steps of:

[0019]Step 1, prepare a raw material, take a proper amount of dimethyl sea, and press the mass than the pure water to stir;

[0020]Step 2, add a certain amount of surfactant to the mass ratio, stir well;

[0021]Step three, the stirred solution is filtered through the filter element to obtain a low temperature plating additive;

[0022]Step 4, package storage of low-plated silver additive finished products.

[0023]Preferably, the temperature of the solution during the second mixing process is controlled at 10-30 ° C, and the stirring time is 2-4 hours.

[0024]The main component of the surfactant is polyethylene glycol.

[0025]The filter machine is filtered by the filter in step three, and the filter element of the filter is 1-10um.

[0026]The mass ratio of dimethylans and polyethylene glycol is 10-30%: 3-5%, and the balance is added to the proportion.

[0027]The low-temperature silver-plate...

Embodiment 1

[0030]It is weighed by 100 grams of dimethyl. 30 grams of polyethylene glycol is added to the beaker. The pure water is added to 870 grams, and the solution in the beaker is heated to 10 ° C, stirred with agitator for 2 hours. The stirred solution was filtered with 1 um filter paper to give 1000 grams of crystal plating additive Phenomet901.

[0031]The resulting additive is plated, and the wafer nickel-titanium silver silver semi-finished product is electroplated according to the following process conditions:

[0032]

[0033]After the above process flow, the product plating is good, the product is measured by thickness measurement data as follows: (take the thickness of 6 grain products in the middle, 3 points per grain, a total of 18 points)

[0034]

Embodiment 2

[0036]It is weighing 200 grams of dimethyl sea. The polyethylene glycol mass is added to the beaker. The pure water is added to 760 grams according to the mass ratio, and the solution in the beaker is heated to 20 ° C, stirred with agitator for 3 hours, The stirred solution was filtered with 5 um filter paper to give 1000 grams of circular plating additive Phenomet901.

[0037]The resulting additive is plated, and the wafer nickel-titanium silver silver semi-finished product is electroplated according to the following process conditions:

[0038]

[0039]According to the following process conditions: The product plating is good, and the product is made of thickness measurement data as follows: (3 points of the middle 6 grain products, a total of 18 points per grain)

[0040]

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Abstract

The invention discloses a method for preparing a silver plating additive on a wafer. The preparing method comprises the following steps that raw materials are prepared, a proper amount of dimethylhydantoin is collected, and pure water is added into a stirring tank for stirring according to the mass ratio; a certain amount of surface active agent is added according to the mass ratio for full stirring; the stirred solution is filtered through a filter element to obtain a low-temperature silver plating additive; and a low-temperature silver plating additive finished product is packaged and stored. According to the method for preparing the silver plating additive on the wafer, gas decomposed in a silver plating use process is prevented from injuring a human body through the preparing method, the environment-friendly requirement is met, the additive is convenient to use, can be normally electroplated at the temperature of 10-30 DEG C, is simple in process, stable in reaction and high in production efficiency, and electroplating can be carried out after an electroplating solution is prepared. The product electroplated by the method is not oxidized in the air, and the product electroplated by the method is high in pure plating degree and fine in crystal.

Description

Technical field[0001]The present invention relates to the field of buffer tank, in particular a method of preparing silver plating additives on wafer.Background technique[0002]The silver plated additive technology is widely used in IC integrated circuit electroplating, compared with ordinary silver plating technology, the medium-plated additive technology is low, simple wastewater treatment is simple, is the current world's commitment to promotion and use. The green environmental plating system; ordinary silver plated technology is applied to the electroplating of the adequate precision.[0003]At present, ordinary silver-plated technology has corrosion phenomenon in equipment, which is broken down into poisonous gases during the production process.[0004]Therefore, it is urgent to prepare a silver plated additive on wafer to solve the above deficiencies.Inventive content[0005]In response to the deficiencies of the prior art, the present invention provides a method of preparing a silve...

Claims

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Application Information

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IPC IPC(8): C25D3/46C25D7/12
CPCC25D3/46C25D7/12
Inventor 涂利彬肖广源
Owner SHANGHAI WELNEW MICRO ELECTRONICS
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