Unlock instant, AI-driven research and patent intelligence for your innovation.

Conductive pattern and preparation method thereof, and flexible electronic device

A conductive pattern and patterning technology, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, conductive layers on insulating carriers, etc., can solve the problems of polymer base acid wet corrosion and high laser power, Damage, poor adhesion between electrical materials and substrates, etc., to achieve the effect of less restrictive conditions, mature technology, and good bonding force

Active Publication Date: 2022-07-29
SHENZHEN INST OF ADVANCED TECH
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, many research groups have studied the patterning process of nano-conductive materials in flexible electronic devices, the most representative one is silver nanowire patterning, the patterning process that has been used so far includes photolithography process, laser ablation process, spray or drop coating process, etc., which are limited by their disadvantages: for example, during photolithography and laser ablation processes, polymer substrates are limited by their susceptibility to wet acid corrosion and damage by high laser power; Spray or drop coating processes can result in poor adhesion of the conductive material to the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive pattern and preparation method thereof, and flexible electronic device
  • Conductive pattern and preparation method thereof, and flexible electronic device
  • Conductive pattern and preparation method thereof, and flexible electronic device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] The embodiment of the present invention provides the above-mentioned preparation method of the conductive pattern, refer to figure 1 , the preparation method comprises the following steps:

[0038] Step S10 , preparing a patterned high molecular polymer substrate through a patterning process, and performing surface treatment on the high molecular polymer substrate to generate the first functional group on the surface of the high molecular polymer substrate.

[0039] Wherein, the patterning process may be any existing patterning process, such as a photolithography process, an electronic printing process, and the like. By patterning the polymer film, the line width of the pattern can be easily controlled, so that finer patterns can be obtained.

[0040] In a preferred solution, the first functional group is generated on the surface of the high molecular polymer substrate by a plasma surface treatment process. It is more preferred to use O 2 Plasma surface treatment pro...

Embodiment 1

[0055] In this embodiment, polyimide (PI) is selected as the material of the high molecular polymer substrate, cysteamine is selected as the small molecular compound, and silver nanowires (AgNWs) are selected as the nano conductive material to further describe the technical solution of the present invention. illustrate.

[0056] see figure 2 , the present embodiment prepares the conductive pattern according to the following process steps:

[0057] (1), using a photolithography process to pattern the PI film to obtain a patterned PI substrate.

[0058] (2), see figure 2 -(a), through the plasma treatment process, the surface of the patterned PI substrate generates free radicals and functional groups, especially -C=O groups, -COOH groups and -OH groups.

[0059] Atomic force microscopy (AFM) uses the interaction force between the probe and the sample to obtain high-resolution images from the surface topography of materials. image 3 is the AFM topography of the PI substrat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a conductive pattern and a preparation method thereof, comprising: a patterned high-molecular polymer substrate, wherein the high-molecular polymer substrate generates a first functional group through a surface treatment process; A small molecule compound grafted on the surface of the high molecular polymer substrate, the small molecule compound has a second functional group; a nanometer compound that is covalently bonded to the small molecule compound by reacting with the second functional group conductive material. The present invention also provides a flexible electronic device including the conductive pattern as described above. In the present invention, the nano conductive material is selectively combined with the patterned high molecular polymer substrate through covalent bonding to form a conductive pattern, which not only improves the patterning precision of the conductive pattern, but also improves the performance of the nano conductive material and the polymer. adhesion between substrates.

Description

technical field [0001] The invention belongs to the technical field of flexible electronic devices, in particular to a conductive pattern and a preparation method thereof, and also to a flexible electronic device comprising the conductive pattern. Background technique [0002] Indium tin oxide (ITO) has both high optical transparency and good electrical conductivity, and is widely used as an electrode material for transparent electronic devices. For flexible electronic devices such as flexible displays, wearable electronic devices, and flexible solar cells, traditional ITO electrodes are increasingly difficult to meet the requirements due to the fact that ITO is relatively hard, brittle, and lacks ductility. Therefore, many materials have been sought to replace ITO for future flexible electronic devices. Among them, nano-conductive materials are more likely to be replaced, including carbon-based nanomaterials and metal nanomaterials, such as carbon nanotubes (CNT) and graph...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/0026
Inventor 吴天准王昊沙拉.卡黛美基尤马尔斯.贾利利
Owner SHENZHEN INST OF ADVANCED TECH