Magnetic tunnel junction structure and magnetic memory thereof

A magnetic tunnel junction and magnetic memory technology, applied in the field of memory, can solve the problems of increasing and reducing the error rate of memory read operations, and achieve the effects of reducing damping coefficient, improving thermal stability, and reducing read and write currents
CN112652703APending Publication Date: 2021-04-13SHANGHAI CIYU INFORMATION TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI CIYU INFORMATION TECH
Publication Date
2021-04-13

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Abstract

The invention provides a magnetic tunnel junction structure and a magnetic memory thereof. The magnetic tunnel junction structure comprises free layers of a double-layer structure, a perpendicular anisotropy enhancement layer and a magnetic damping barrier layer, wherein the perpendicular anisotropy enhancement layer is arranged between the two free layers and formed by a metal oxide layer containing doping elements, and the magnetic damping barrier layer is arranged above the free layers. The vertical anisotropy enhanced double-free-layer structure is adopted, the energy barriers of the free layers are regulated and controlled, the thermal stability is improved, and the damping coefficient is regulated and controlled, so that the write current is reduced.
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Description

technical field

[0001] The invention relates to the technical field of memory, in particular to a magnetic tunnel junction structure and a magnetic memory thereof. Background technique

[0002] Magnetic random access memory (MRAM) has two magnetizations in the vertical direction as a free layer for storing information in a magnetic tunnel junction (MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA). direction, that is: up and down, corresponding to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it empty, the magnetization direction of the free layer will change remain unchanged; during the writing process, if a signal different from the state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the MRAM to remain unchanged is called the data retention capability or...

Claims

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