Magnetic tunnel junction structure and magnetic memory thereof

A magnetic tunnel junction and magnetic memory technology, applied in the field of memory, can solve the problems of increasing and reducing the error rate of memory read operations, and achieve the effects of reducing damping coefficient, improving thermal stability, and reducing read and write currents

Pending Publication Date: 2021-04-13
SHANGHAI CIYU INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to improve the thermal stability factor (▽) of ultra-small MRAM unit devices, the effective vertical effective Anisotropic energy density, thereby maintaining a high thermal stability factor (▽), but the tunneling magnetoresistance rate (TunnelMagnetoresistance Ration, TMR) of the magnetic tunnel junction will decrease, thereby increasing the error rate of memory read operations

Method used

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  • Magnetic tunnel junction structure and magnetic memory thereof
  • Magnetic tunnel junction structure and magnetic memory thereof
  • Magnetic tunnel junction structure and magnetic memory thereof

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Embodiment Construction

[0028] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0029]The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0030] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and th...

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Abstract

The invention provides a magnetic tunnel junction structure and a magnetic memory thereof. The magnetic tunnel junction structure comprises free layers of a double-layer structure, a perpendicular anisotropy enhancement layer and a magnetic damping barrier layer, wherein the perpendicular anisotropy enhancement layer is arranged between the two free layers and formed by a metal oxide layer containing doping elements, and the magnetic damping barrier layer is arranged above the free layers. The vertical anisotropy enhanced double-free-layer structure is adopted, the energy barriers of the free layers are regulated and controlled, the thermal stability is improved, and the damping coefficient is regulated and controlled, so that the write current is reduced.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic tunnel junction structure and a magnetic memory thereof. Background technique [0002] Magnetic random access memory (MRAM) has two magnetizations in the vertical direction as a free layer for storing information in a magnetic tunnel junction (MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA). direction, that is: up and down, corresponding to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it empty, the magnetization direction of the free layer will change remain unchanged; during the writing process, if a signal different from the state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the MRAM to remain unchanged is called the data retention capability or...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L27/22
CPCH10B61/00H10N50/85H10N50/10
Inventor 张云森郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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