Unlock instant, AI-driven research and patent intelligence for your innovation.

A laser-based in-situ assisted wafer grinding device

A grinding and laser technology, which is applied in the direction of fixed grinding wheel devices, laser welding equipment, grinding machine parts, etc., can solve the problem that it is not suitable for high-efficiency and mass processing of large-diameter wafers, and the laser is directly irradiated into the processing dead zone. , Difficult to apply wafer ultra-precision grinding and other issues, to achieve the effect of increasing material removal rate, improving grinding quality, and light weight

Active Publication Date: 2022-04-05
HUAZHONG UNIV OF SCI & TECH
View PDF20 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing laser assisted grinding mainly contains the laser grinding process that uses external laser head, and its laser head and grinding wheel are separated from each other. A laser-assisted grinding device and grinding method. CN109454325A discloses a laser-assisted cutting and grinding device for processing transparent hard and brittle materials and its technology. This laser-assisted grinding cannot directly irradiate the laser to the processing dead zone inside, it is difficult to heat the material to be removed uniformly, and the movement direction is single, and the grinding quality is poor
[0004] Based on these problems, those skilled in the art have conducted further research and proposed an embedded laser-assisted grinding process. For example, CN110449995A discloses a laser-assisted grinding device and method for free-form surface grinding. It uses a hollow The design of grinding pins and the introduction of in-situ laser-assisted technology have effectively improved the precision and efficiency of ultra-precision grinding. The local area interacting with the workpiece is used for processing, so it is not suitable for long-term high-efficiency mass processing of large-caliber wafers; CN109605138A discloses an embedded laser-assisted ultra-precision cylindrical grinding device and its working method, which uses a spindle The integrated design model introduces the laser system from the center of the spindle of the cylindrical grinder to the center of the grinding wheel, and then through the splitting design of the center of the grinding wheel, introduces the focused laser into the middle of the processing dead zone to improve production efficiency. However, this device can only achieve intermittent The laser irradiation, the laser utilization efficiency is very low, and intermittent laser irradiation will lead to inconsistent grinding of the workpiece on the grinding edge of the grinding wheel with laser area and without laser area, resulting in uneven grinding, which greatly affects the grinding quality , so it is difficult to apply to ultra-precision grinding of wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A laser-based in-situ assisted wafer grinding device
  • A laser-based in-situ assisted wafer grinding device
  • A laser-based in-situ assisted wafer grinding device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0034] Such as figure 1 As shown, the embodiment of the present invention provides a laser in-situ assisted wafer grinding device, which includes a grinding module and a laser generation module, wherein the grinding module is used to grind the wafer, and the laser generation module It is used to emit laser and make the laser emit along the radial direction of the grinding wheel. Through the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of ultra-precision processing, and specifically discloses a laser-based in-situ assisted wafer grinding device, which includes a grinding module and a laser generating module, and the grinding module is used for grinding wafers, which includes The grinding spindle and the transparent grinding wheel and the spindle motor arranged at both ends of the grinding spindle. The spindle motor is used to drive the grinding spindle and the transparent grinding wheel on it to rotate so as to use the circumference of the transparent grinding wheel to face the wafer. Grinding: The laser generator module is installed in the middle of the grinding module, which is used to emit the laser that coincides with the axis of the grinding spindle, and make the laser pass through the transparent grinding wheel to emit along its radial direction, so that the laser is always focused on the wafer The part to be ground can realize the laser in-situ assisted grinding process of the wafer. The invention can realize the in-situ laser assisted grinding process of the wafer, efficiently remove the material, greatly reduce the grinding force, and improve the grinding quality.

Description

technical field [0001] The invention belongs to the field of ultra-precision processing, and more specifically relates to a laser in-situ assisted wafer grinding device. Background technique [0002] Wafers are silicon wafers used in the production of silicon semiconductor integrated circuits. They are in great demand and require high processing precision. During their processing, ultra-precision grinding, such as scribing and edge grinding, is required. Ultra-precision grinding refers to the use of grinding wheels for grinding, grinding, polishing and other processing of workpieces. The size and shape precision of the processing can reach the sub-micron level, and the surface roughness can reach the nano-level. It is an important research in ultra-precision machining today. one. [0003] Laser-assisted grinding refers to a processing technology that heats the area to be processed by laser to soften the material and then perform precision grinding. Due to the excellent cont...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24B35/00B24B41/04B24B41/00B24B45/00B24D3/00B23K26/06B23K26/354B23K26/70
Inventor 许剑锋张建国郑正鼎汪凯陈肖肖峻峰
Owner HUAZHONG UNIV OF SCI & TECH