Growing method of monocrystalline silicon and monocrystalline silicon

Abstract

The invention discloses a growth method of monocrystalline silicon and monocrystalline silicon, and belongs to the technical field of monocrystalline silicon. The growth method of the monocrystalline silicon comprises the following steps of: putting a set amount of polycrystalline silicon raw material and a dopant into a growth container; carrying out crystal growth by adopting a pulling method; continuously growing a to-be-detected crystal at the last stage of an ending stage; calculating the concentration of the dopant in the remainder of the growth container by testing the resistivity of the to-be-detected crystal; and calculating the supplement amount of the dopant according to the concentration of the dopant in the remainder so as to supplement the concentration of the dopant to a set value for the growth of the next crystal. According to the method, the concentration of the dopant in the remainder can be more accurately tested, the concentration of the dopant in the growth container before the next crystal grows can be accurately controlled, the resistivity of the crystal can be more accurately controlled, the resistivity of the crystal is prevented from deviating from a target value to a certain extent, and the product percent of pass is increased.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon, in particular to a method for growing single crystal silicon and single crystal silicon. Background technique [0002] At present, the Czochralski (Czochralski) pulling method is the mainstream method for preparing single crystal silicon crystals. In this method, high-purity polysilicon raw materials are added to a quartz crucible for melting, and seed crystals are used to seed crystals, and the crystals are gradually extracted from the melt through precise control. Large-sized single crystals grow. The growth procedure includes seeding, necking, shouldering, isometric growth and finishing procedures, and the complete process takes tens of hours. [0003] In order to reduce production costs, the industry usually refills polysilicon raw materials in the crucible after growing a crystal to grow new crystals, so as to increase the utilization times of the crucible, so that the servic...

AI Technical Summary

Problems solved by technology

During the complete cycle of the crucible, due to the complex growth program and growth parameters such as furnace chamber pressure, temperature, time, etc., the volatilization of dopant atoms is significantly affected, making it extremely difficult to accurately predict the dopant concentration in the melt

The deviation of dopant concentration will cause the actual resistivity of the crystal to deviate from the target value, reducing the proportion of compliant crystals

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