42results about How to "Control resistivity" patented technology

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

The invention provides a preparation method of magnetic silicon carbide ceramic nano particles, and relates to silicon carbides. The method comprises the steps that 1, magnetic metallo-organic compounds and polycarbosilane react in a solution, magnetic metal sol is obtained; 2, the magnetic metal sol obtained from the step 1 and pitch are mixed and react, then solvents are eliminated, and a mixture with the evenly distributed magnetic metal polycarbosilane precursors and pitch is obtained; 3, the mixture obtained in the step 2 is placed in a high temperature furnace, air or oxygen is led into the high temperature furnace to oxygenize the mixture, then the mixture is cooled, and cross-linking by-products are obtained; 4, the cross-linking by-products are placed in the high temperature furnace, inert gases are led to the high temperature furnace to carbonize the cross-linking by-products, the cross-linking by-products are cooled, and carbon-scattered magnetic silicon carbide ceramic nano particles are obtained; 5, the carbon-scattered magnetic silicon carbide ceramic nano particles are heated in an air atmosphere to an oxygenolysis decomposition temperature for carbon removing, and the magnetic silicon carbide ceramic nano particles are obtained. The magnetic silicon carbide ceramic nano particles can attenuate certain electromagnetic radiation due to the fact that the magnetic silicon carbide ceramic nano particles have both magnetic loss and dielectric loss, and an electromagnetic wave absorption effect is achieved.

It has been discovered that finely ground elemental graphite enhances the electrical conductivity of a coating when added to conductive amorphous carbon, using any one of several different binders in formulating the coating. The coating can be energized with electrical energy creating an electrical resistance heat element. Such combination of amorphous carbon and elemental graphite particles, ranging in size from about 0.001 to less than 1 micron, creates a more uniform conductive coating compared to use of larger sized particles, where the amount of conductive particles ranges from about 5 to about 80 weight-% based on the non-volatile solids content of the coating formulation (e.g., without solvent and other components that evolve (are driven off) from the coating during drying).

Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow.

The invention relates to a method for preparing an W-doped Al2O3 high-resistance membrane through atomic layer deposition and aims at solving the problems that in the prior art,the thickness and the doping ratio of the membrane cannot be accurately controlled, and particularly defects exist when the accuracy of controlling the thickness of the membrane reaches an atom level and large-area uniformgrowth is realized at the same time. The method comprises the following steps of (1) putting a matrix into a deposition chamber; (2) vacuumizing the deposition chamber, heating the matrix; (3) performing Al2O3 deposition circulation for 2-5 times, wherein single Al2O3 deposition comprises the following steps of (3.1) introducing a precursor Al source into the deposition chamber, and purging the deposition chamber with the Al source at deposition chamber exposure set time; (3.2) introducing a precursor oxygen source to obtain a single layer Al2O3; and (3.3 ) purging the deposition chamber; (4)performing W deposition for 1-2 times, wherein the step of performing W deposition for 1-2 times comprises the following steps of (4.1) introducing a precursor W source into the deposition chamber, and purging the deposition chamber; (4.2) introducing a reducer to obtain a single-layer W metal element; and (4.3) purging the deposition chamber; and (5) sequentially conducting the step (3) and the step (4) repeatedly for many times to obtain the W-doped Al2O3 high-resistance membrane.

The invention relates to the field of nonferrous metal processing, in particular to a preparation method of a silver-containing copper bar for a large-capacity phase regulator. The preparation methodcomprises the following steps: material preparation; step 2, up-drawing continuous casting; step 3, continuous extrusion; step 4, finished product drawing. The scheme has the beneficial effects that the resistivity of the silver-containing copper bar product is controlled within 0.01765-0.01898 omega.m/m<2>, the conductivity deviation is small, and the use demands of a rotor coil of the large-capacity air-cooled phase regulator are met.

The invention relates to a silicon ingot and a preparation method thereof. The preparation method of the silicon ingot comprises the following steps: uniformly mixing dopants with coating materials and then coating the inner wall of a crucible of an ingot furnace with the mixture, thus forming a crucible coating; and after the crucible coating is solidified, adding silicon materials to the crucible of the ingot furnace and then carrying out melting, directional solidification and annealing on the silicon materials in sequence, thus obtaining the silicon ingot. In the preparation method of the silicon ingot, firstly the dopants are uniformly mixed with the coating materials and the inner wall of the crucible is coated with the mixture, and then at the silicon material melting stage, a small number of dopants enter the silicon liquid obtained after melting to be fused with the silicon liquid to undergo segregation; and the directional solidification process is the crystal growth stage and plenty of dopants on the inner wall of the crucible can diffuse in the silicon ingot, so that segregation of the dopants can be reduced and the resistivity of the silicon ingot can be effectively controlled, thus enabling the resistivity of the silicon ingot to be uniform in distribution, increasing the yield of the cast ingot and effectively reducing the cost. Besides, the invention also relates to the silicon ingot prepared by the preparation method.

The invention relates to the technical field of magnetic materials, in particular to a ferrite-coated FeSiAl metal magnetic powder core and a preparation method thereof. The preparation method comprises the following steps of (1) mixing, heating, stirring and drying FeSiAl metal soft magnetic powder and an aqueous solution of soluble ferric salt; (2) mixing with a soluble hydroxide solution, stirring at normal temperature, and drying; (3) uniformly mixing with a binder and a lubricant, and carrying out compression molding to obtain a green body; and (4) carrying out heat treatment on the greenbody in vacuum or nitrogen or hydrogen, cooling and spraying to obtain the ferrite-coated FeSiAl metal magnetic powder core. The uniform iron hydroxide layer is formed on the outer surface of the FeSiAl metal soft magnetic powder through a chemical co-deposition method, the iron hydroxide layer is converted into the compact and uniform ferrite insulating layer through compression molding and high-temperature heat treatment, breakage of the ferrite insulating layer in the pressing process is avoided, the ferrite insulating layer on the outer layer is ferromagnetic, the magnetic dilution effectcan be reduced, and the magnetic performance of the composite material is further improved.

The invention discloses a gold-iron alloy interconnection wire and a manufacturing method thereof. The gold-iron alloy interconnection wire contains two elements of gold and iron, and the iron content is between 0.1% and 0.5%. The method includes: configuring the solution; cleaning the semiconductor chip; coating a layer of photolithography on the cleaned semiconductor chip glue, then expose and develop, photoetch the lines that need to be wired; sputter the seed layer on the chip; coat a layer of photoresist on the semiconductor chip again, then expose and develop, and expose the lines that need to be electroplated, no need The place where the electroplating is thickened is protected with photoresist to achieve selective electroplating; the semiconductor chip is fixed on the fixture, and the semiconductor chip is electroplated; the secondary photoresist is removed with acetone and ethanol; Put it into acetone and ethanol solution, and ultrasonically peel off the purely conductive seed layer during electroplating. The invention satisfies the needs of high power and high frequency compound semiconductor interconnection strength and resistivity.

The invention provides a conductive silicon carbide single crystal. Doped elements comprise nitrogen and an element of which the atomic radius is greater than that of silicon. The resistivity of the conductive silicon carbide single crystal is from 0.01 [Omega]. cm to 0.05 [Omega]. cm; the doping concentration of the element having an atomic radius greater than the atomic radius of silicon is 0.1%-10% of the concentration of the nitrogen element. According to the silicon carbide crystal, on the basis of doping of a nitrogen element, through introduction of an element of which the atomic radius is greater than that of silicon and control of the concentrations of nitrogen and the element of which the atomic radius is greater than that of silicon, the resistivity is ensured to meet the requirements of a conductive silicon carbide single crystal substrate, lattice distortion caused by the size difference of nitrogen atoms and carbon atoms can be compensated, the internal stress of the crystal is reduced, and the dislocation density in the crystal is reduced. The invention also provides a preparation method of the conductive silicon carbide single crystal.

The invention provides a preparation method of graphite foam. The method comprises the following steps that graphite nanosheets are used as raw materials; a small number of macromolecular bonding agents are added; through template forming, the graphite foam is formed after the drying. The preparation method provided by the invention is simple and convenient, and can be used for forming graphite foam in various shapes; in addition, the prepared graphite foam has the controllable density and uniform pores. The prepared graphite foam also has the advantages of high pressure-resistant intensity, low resistance, oil absorbability, high heat conductivity and the like, can be widely applied to the fields of heat radiators, heat conduction pads, electromagnetic shielding materials and the like, and has wide application prospects.

The invention relates to a self-conductive type polymer framework resistance reducing agent. The self-conductive type polymer framework resistance reducing agent comprises the following raw materials in parts by weight: 50-60 parts of N-hydroxymethyl acrylamide, 30-40 parts of N, N'-methylene bisacrylamide, 25-30 parts of acetylenedicarboxylic acid, 15-20 parts of manganese chloride, 8-13 parts of sodium sulfite, 100-130 parts of water and 3-8 parts of aqueous dispersant. The self-conductive type polymer framework resistance reducing agent has the advantages of effective and durable resistance reduction and capability of not being affected by the environment.

The invention relates to the field of metal machining, in particular to a method for preparing a silver-contained copper rod for a large-capacity phase modifier. The method comprises the following steps that of 1, material preparation; 2, upcasting continuous casting unit preparation; 3, parameter adjustment; 4, power frequency melting furnace using; and 5, rod guiding. The silver-contained copperrod manufactured through the scheme is adopted as a base material for manufacturing a silver-contained copper bar product, the conductivity deviation of the obtained silver-contained copper bar product is small, and the use need of a rotor winding of the phase modifier can be met.

The invention relates to a method for preparing a Mo-doped Al2O3 high-resistance film by atomic layer deposition, and solves the problems of incapability of precisely controlling the film thickness and the mixing ratio, in particular existence of defects on the aspects of control of the film thickness precision reaching the atomic grade and synchronous realization of large-area uniform growth in the prior art. The method comprises the following steps: 1) a basal body is put in a deposition chamber; 2) the deposition chamber is vacuumized; and the basal body is heated; 3) 8-11 times of Al2O3 deposition circulation are performed; and single Al2O3 deposition comprises the following steps: 3.1) a precursor Al source is introduced into the deposition chamber; the Al source is exposed in the deposition chamber by set time; and the deposition chamber is purged; 3.2) a precursor oxygen source is introduced to obtain single-layer Al2O3; and 3.3) the deposition chamber is purged; 4) once Mo deposition is performed: 4.1) a precursor Mo source is introduced in the deposition chamber; and the deposition chamber is purged; 4.2) a reducing agent is introduced to obtain single-layer Mo metal simple substances; and 4.3) the deposition chamber is purged; and 5) the steps 3) and 4) are repeated by multiple times in sequence to obtain the Mo-doped Al2O3 high-resistance film.

The invention discloses a LiZn ferrite material with low coercive force, which comprises raw materials of Fe2O3, ZnO, Li2CO3, Bi2O3, Mn3O4, Nb2O5, and polyvinyl alcohol, wherein the mole ratio of Fe2O3 to ZnO to Li2CO3 is (45-50):(10-15):(6-8); the mass fractions of Bi2O3, Mn3O4, and Nb2O5 are 1.5-2.2%, 1.5-2%, and 0.15-0.25%, based on the mass sum of Fe2O3, ZnO, and Li2CO3; and the mass fraction of polyvinyl alcohol is 14-17% based on the mass sum of Fe2O3, ZnO, Li2CO3, Bi2O3, Mn3O4, and Nb2O5. The LiZn ferrite material with low coercive force is prepared through the following steps: first ball milling, pre-sintering, second ball milling, pelleting and moulding, and sintering.

The invention discloses a method for growing a zinc oxide material by modulating temperature periodically. The method comprises the following steps of: 1, selecting a substrate and zincifying the substrate in a low-temperature growing area of metal organic chemical vapor deposition (MOCVD) equipment; 2, inflating a zinc-source-containing metal organic compound and nitrous oxide into the low-temperature growing area of the MOCVD equipment by using carrier gas and growing a layer of low-temperature zinc oxide material on the substrate in the low-temperature growing area; 3, stopping inflating the metal organic compound and the nitrous oxide, transferring the zinc oxide material growing at low temperature from the low-temperature growing area of a reaction chamber to a high-temperature annealing area by using a transmission device of the MOCVD equipment and annealing quickly at high temperature; 4, transferring the substrate on which the zinc oxide material grows and which is annealed quickly at high temperature from the high-temperature annealing area to the low-temperature growing area by using the transmission device and repeating the step 2 and the step 3 for multiple times; and 5, transferring the substrate on which the zinc oxide material grows to a sampling area when the temperature of the low-temperature growing area is reduced to room temperature, taking a sample out and finishing the growth of the zinc oxide material.

Disclosed is a manufacturing method for a silicon single crystal, in which the silicon single crystal is grown by an FZ method for controlling the resistivity while blowing a dopant gas into a moltenband region. The method comprises the steps: (S1) acquiring actual data for growing the silicon single crystal by means of a prescribed growing device; step (S2), based on the cultivation actual data,calculating the relationship between the actual value of the resistivity of the silicon single crystal and the doping gas absorption rate of the silicon single crystal; (S3) calculating the amount ofdoped gas supplied on the basis of the relationship between the actual value of the resistivity and the absorption rate of the doped gas and the target value of the resistivity of the silicon singlecrystal manufactured using the same cultivation device; (S4) controlling the resistivity of the cultured silicon single crystal while blowing the dopant gas by using the calculated dopant gas supply amount.

The invention discloses a growth method of monocrystalline silicon and monocrystalline silicon, and belongs to the technical field of monocrystalline silicon. The growth method of the monocrystalline silicon comprises the following steps of: putting a set amount of polycrystalline silicon raw material and a dopant into a growth container; carrying out crystal growth by adopting a pulling method; continuously growing a to-be-detected crystal at the last stage of an ending stage; calculating the concentration of the dopant in the remainder of the growth container by testing the resistivity of the to-be-detected crystal; and calculating the supplement amount of the dopant according to the concentration of the dopant in the remainder so as to supplement the concentration of the dopant to a set value for the growth of the next crystal. According to the method, the concentration of the dopant in the remainder can be more accurately tested, the concentration of the dopant in the growth container before the next crystal grows can be accurately controlled, the resistivity of the crystal can be more accurately controlled, the resistivity of the crystal is prevented from deviating from a target value to a certain extent, and the product percent of pass is increased.