A kind of method for preparing Cu-doped indium sulfide film

A technology of indium sulfide and thin film, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc. It can solve the problems of lower resistivity, high resistivity of thin film, unfavorable conversion efficiency of thin film solar cells, etc., and achieve easy and uniform doping , high purity, and the effect of reducing film resistivity
CN105428217BInactive Publication Date: 2017-11-17FUZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
FUZHOU UNIV
Publication Date
2017-11-17
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention discloses a Cu-doped indium sulfide film preparation method. According to the method, a vacuum evaporation method is adopted, a thin Cu layer is evaporated between two layers of indium sulfide films, and then Cu is diffused into the indium sulfide films by thermal annealing, so that the aim of preparing a Cu-doped indium sulfide film is fulfilled. According to the method disclosed by the present invention, doping concentration can be controlled by controlling the amount of the evaporated Cu, thereby fulfilling the aim of reducing film resistivity to varying degrees. The film prepared by the method disclosed by the present invention can be used as a buffer layer of a solar cell.
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Description

technical field

[0001] The invention belongs to the technical field of material preparation, and in particular relates to a method for preparing a Cu-doped indium sulfide film. Background technique

[0002] General copper zinc tin sulfur (Cu 2 ZnSnS 4 , referred to as CZTS) thin-film solar cell structure is: medium / bottom electrode / absorbing layer (CZTS) / buffer layer / transparent conductive layer / top electrode, where the buffer layer is mainly used to reduce the gap between the transparent conductive layer and the absorbing layer. For continuous phenomena, materials with high light transmittance and resistivity in the range of 5.0~120Ω∙cm are generally used. Current solar cells mainly use CdS as a buffer layer, but CdS is a toxic material and is not suitable for sustainable development, so it is necessary to develop a non-toxic and environmentally friendly material to replace it. Indium sulfide (In 2 S 3 ) is a non-toxic semiconductor material with a band gap of 2.0~3.7e...

Claims

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