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A kind of MEMS inductive pressure sensor and preparation method thereof

A pressure sensor and inductive technology, applied in the field of MEMS, can solve the problems of poor linearity, small temperature drift, and difficult application of MEMS capacitive pressure sensors, and achieve a wide range of applications, small temperature drift, and simple structure Effect

Active Publication Date: 2022-07-01
NANJING GAOHUA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MEMS capacitive pressure sensors mainly respond to pressure changes through capacitance changes, which have the advantage of small temperature drift, but poor linearity
In addition, the existing MEMS piezoresistive pressure sensors and MEMS capacitive pressure sensors are usually difficult to apply in some environments that cannot be connected (such as sealed environments, flammable and explosive environments)

Method used

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  • A kind of MEMS inductive pressure sensor and preparation method thereof
  • A kind of MEMS inductive pressure sensor and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] like Figure 1-2 As shown, the MEMS inductive pressure sensor proposed by the present invention includes a stacked first substrate 4 and a second substrate 7;

[0036] A pressure sensitive film 1 is formed on the upper surface of the first substrate 4; a first groove 3 is formed on the lower surface of the first substrate 4 opposite to the pressure sensitive film 1 by etching;

[0037] A ferromagnetic core 2 is arranged on the lower surface of the pressure sensitive film 1, and the ferromagnetic core 2 is located in the first groove 3;

[0038] The second groove 8 is arranged on the upper surface of the second substrate 7, and forms a vacuum chamber 10 with the first groove 3;

[0039] The third groove 9 is arranged on the lower surface of the second substrate 7 around and spaced apart from the second groove 8;

[0040] The insulating layer 6 is arranged on the lower surface of the second substrate 7;

[0041] The inductor coil layer 5 is provided on the surface of t...

Embodiment 2

[0058] The present invention also proposes a preparation method of a MEMS inductive pressure sensor. Specifically, the preparation method includes the following steps:

[0059] a. Select a 500mm thick N-type (100) single crystal silicon wafer as the first substrate 4, through photolithography and KOH anisotropic wet etching to obtain a first groove 3 with a depth of, for example, 480 μm and a thickness of, for example, 20μm pressure sensitive film 1;

[0060] b. Install a ferromagnetic core 2 on the lower surface of the pressure sensitive film 1 by means of assembly. The ferromagnetic core 2 is, for example, a nickel-iron alloy block, and its dimensions are, for example: length´width´height=200μm´200μm´600μm;

[0061] c. Select a 500mm thick N-type (100) single crystal silicon wafer as the second substrate 7, and perform photolithography and KOH anisotropic wet etching on the upper surface of the second substrate 7 to obtain a depth of, for example, 400 μm, A second groove 8 ...

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Abstract

The present invention provides a MEMS inductive pressure sensor and a preparation method thereof. The pressure sensor comprises: a stacked first substrate and a second substrate; a pressure sensitive film arranged on the upper surface of the first substrate; a first substrate a groove, arranged on the lower surface of the first substrate, opposite to the pressure-sensitive film; a ferromagnetic core, arranged on the lower surface of the pressure-sensitive film, located in the first groove; a second groove a groove, arranged on the upper surface of the second substrate, and forming a vacuum cavity with the first groove; a third groove, arranged on the lower surface of the second substrate around and spaced from the second groove ; The inductor coil layer is arranged on the lower surface of the second substrate. The sensor has simple structure, excellent linearity, high sensitivity, small temperature drift and wide application scenarios.

Description

technical field [0001] The invention relates to the field of micro-electromechanical system MEMS, in particular to a MEMS inductive pressure sensor and a preparation method thereof. Background technique [0002] The pressure sensor is mainly used for the measurement of environmental pressure. It has been developed for many years. It is widely used in the fields of national defense, military, industry, agriculture and medical treatment, and is currently the most common type of sensor. MEMS pressure sensors have the advantages of easy miniaturization, high fabrication accuracy and good consistency, so they are favored by people. MEMS pressure sensors mainly include two types of MEMS piezoresistive pressure sensors and MEMS capacitive pressure sensors. The size of the MEMS piezoresistive pressure sensor mainly responds to the pressure change through the resistance change. It has the advantage of simple structure, but the temperature drift is large. MEMS capacitive pressure se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/14
Inventor 李维平侯鸿道兰之康
Owner NANJING GAOHUA TECH
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