Silicon carbide trench mosfet device and manufacturing method
A technology of silicon carbide trench and silicon carbide, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effects of small forward conduction voltage drop, reduced leakage current, and large forward withstand voltage
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Embodiment 1
[0118] A silicon carbide reverse resistance trench MOSFET device, its half cell structure is as follows figure 2 As shown, its half-cell structure includes a back drain metal 1, a second N-type silicon carbide buffer layer 21, and an N-type silicon carbide epitaxial layer 3, which are sequentially stacked from bottom to top.
[0119]Above the N-type silicon carbide epitaxial layer 3 is the gate 9 and the first N-type silicon carbide buffer layer 11 , and above the first N-type silicon carbide buffer layer 11 is the first P-type base region 4 , and the first P-type base region 4 Above are the first P-type source region 5 and the first N-type source region 7 , the first P-type source region 5 and the first N-type source region 7 are connected left and right, and the source metal 6 is respectively connected with the first P-type source region 5 It is connected up and down with part of the first N-type source region 7;
[0120] Between the gate 9 and the N-type silicon carbide e...
Embodiment 2
[0136] A silicon carbide reverse resistance trench MOSFET device, its half cell structure is as follows image 3 As shown, its half-cell structure includes a back drain metal 1, a second N-type silicon carbide buffer layer 21, and an N-type silicon carbide epitaxial layer 3, which are sequentially stacked from bottom to top.
[0137] Above the N-type silicon carbide epitaxial layer 3 is the gate 9 and the first N-type silicon carbide buffer layer 11 , and above the first N-type silicon carbide buffer layer 11 is the first P-type base region 4 , and the first P-type base region 4 Above are the first P-type source region 5 and the first N-type source region 7 , the first P-type source region 5 and the first N-type source region 7 are connected left and right, and the source metal 6 is respectively connected with the first P-type source region 5 It is connected up and down with part of the first N-type source region 7;
[0138] Between the gate 9 and the N-type silicon carbide e...
Embodiment 3
[0154] A silicon carbide reverse resistance trench MOSFET device, its half cell structure is as follows Figure 4 As shown, its half-cell structure includes a back drain metal 1, a second N-type silicon carbide buffer layer 21, and an N-type silicon carbide epitaxial layer 3, which are sequentially stacked from bottom to top.
[0155] Above the N-type silicon carbide epitaxial layer 3 is the gate 9 and the first N-type silicon carbide buffer layer 11 , and above the first N-type silicon carbide buffer layer 11 is the first P-type base region 4 , and the first P-type base region 4 Above are the first P-type source region 5 and the first N-type source region 7 , the first P-type source region 5 and the first N-type source region 7 are connected left and right, and the source metal 6 is respectively connected with the first P-type source region 5 It is connected up and down with part of the first N-type source region 7;
[0156] Between the gate 9 and the N-type silicon carbide ...
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